Analysis of buried interfaces in multilayer device structures with hard XPS (HAXPES) using a CrKα source

被引：22

作者：

Renault, O. ^{[1
]}

Martinez, E. ^{[1
]}

Zborowski, C. ^{[1
,2
]}

Mann, J. ^{[3
]}

Inoue, R. ^{[4
]}

Newman, J. ^{[3
]}

Watanabe, K. ^{[4
]}

机构：

[1] Univ Grenoble Alpes, CEA, LETI, F-38000 Grenoble, France

[2] Univ Southern Denmark, Dept Phys Chem & Pharm, Odense M, Denmark

[3] Phys Elect, 18725 Lake Dr, Chanhassen, MN 55317 USA

[4] ULVAC PHI Inc, 2500 Hagisono, Chigasaki, Kanagawa 2538522, Japan

来源：

SURFACE AND INTERFACE ANALYSIS | 2018年 / 50卷 / 11期

关键词：

buried interface; CrK alpha; hard X-ray; HAXPES; XPS; RAY PHOTOELECTRON-SPECTROSCOPY; BACKGROUND ANALYSIS; OXIDATION; PARAMETERS; RANGE;

D O I：

10.1002/sia.6451

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Applications of laboratory hard X-ray photoelectron spectroscopy on buried interfaces in devices are presented. We use a novel spectrometer fitted with a monochromated CrK alpha source (photon energy: 5414.9 eV) and a high-voltage analyzer. Elements buried at depths as deep as 25 nm underneath various overlayers such as Al/Ta and Pt/Ti are detected and quantified from survey spectra, with chemical shifts accessible from high-resolution scans. Different analysis conditions towards optimizing the information depth are presented and discussed.

引用

页码：1158 / 1162

页数：5

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