Ultraviolet, visible and near infrared photoresponse of SiO2/Si/SiO2 multilayer system into a MOS capacitor

被引：4

作者：

Gonzalez-Flores, K. E. ^{[1
]}

Frieiro, J. L. ^{[3
]}

Horley, P. ^{[1
]}

Perez-Garcia, S. A. ^{[1
]}

Palacios-Huerta, L. ^{[2
]}

Moreno, M. ^{[2
]}

Lopez-Vidrier, J. ^{[3
]}

Hernandez, S. ^{[3
]}

Garrido, B. ^{[3
]}

Morales-Sanchez, A. ^{[2
]}

机构：

[1] Ctr Invest Mat Avanzados SC, PIIT, Campus Monterrey,Alianza Norte 202, Apodaca 66628, Nuevo Leon, Mexico

[2] INAOE, Dept Elect, Puebla 72000, Mexico

[3] Univ Barcelona, Dept Elect & Biomed Engn, MIND, Marti i Franques 1, E-08028 Barcelona, Spain

来源：

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING | 2021年 / 134卷

关键词：

Photoresponse; Spectral response; External quantum efficiency; Silicon nanoclusters; Silicon rich oxide (SiOx); Multilayers;

D O I：

10.1016/j.mssp.2021.106009

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, we report on the photoresponse properties of a SiO2/Si/SiO2 multilayer (ML) system deposited at 500 degrees C and integrated into a metal-oxide-semiconductor structure (Al/ML/p-Si) without any further thermal annealing. High contents of elemental Si (Si0) revealed by the XPS measurements suggests the formation of amorphous Si-nanoclusters (a-Si ncls) within the ML. Dark and illuminated I-V curves of the device indicate its sensitivity to ultraviolet, visible and near infrared light under applied bias and at 0 V. In addition, we observed variation of the spectral response and the external quantum efficiency as a function of the electrode size. At 0 V, the device illuminated with a wavelength at 550 nm exhibits a maximum external quantum efficiency of 0.95% and a spectral response of 4.1 mA/W. This photoresponse has been ascribed to photon absorption in SiO2 subband states created by the a-Si ncls and defects formed by the excess Si inside the SiO2/Si/SiO2 multilayers.

引用

页数：7

共 37 条

[1] Silicon nanocrystal-based photosensor on low-temperature polycrystalline-silicon panels [J].

Chiang, Wen-Jen ;

Chen, Chih-Yang ;

Lin, Chrong-Jung ;

King, Ya-Chin ;

Cho, An-Thung ;

Peng, Chia-Tian ;

Chao, Chih-Wei ;

Lin, Kun-Chih ;

Gan, Feng-Yuan .

APPLIED PHYSICS LETTERS, 2007, 91 (05)

[2] Silicon quantum dot/crystalline silicon solar cells [J].

Cho, Eun-Chel ;

Park, Sangwook ;

Hao, Xiaojing ;

Song, Dengyuan ;

Conibeer, Gavin ;

Park, Sang-Cheol ;

Green, Martin A. .

NANOTECHNOLOGY, 2008, 19 (24)

[3] High-efficiency silicon-compatible photodetectors based on Ge quantum dots [J].

Cosentino, S. ;

Liu, Pei ;

Le, Son T. ;

Lee, S. ;

Paine, D. ;

Zaslavsky, A. ;

Pacifici, D. ;

Mirabella, S. ;

Miritello, M. ;

Crupi, I. ;

Terrasi, A. .

APPLIED PHYSICS LETTERS, 2011, 98 (22)

[4] UV Sensitivity of MOS Structures with Silicon Nanoclusters [J].

Curiel, Mario ;

Nedev, Nicola ;

Paz, Judith ;

Perez, Oscar ;

Valdez, Benjamin ;

Mateos, David ;

Arias, Abraham ;

Nesheva, Diana ;

Manolov, Emil ;

Nedev, Roumen ;

Dzhurkov, Valeri .

SENSORS, 2019, 19 (10)

[5] Size effect on electronic transport in nC-Si/SiOx core/shell quantum dots [J].

Das, Debajyoti ;

Samanta, Arup .

MATERIALS RESEARCH BULLETIN, 2012, 47 (11) :3625-3629

[6] Size-Dependent Photoresponse of Germanium Nanocrystals-Metal Oxide Semiconductor Photodetector [J].

Dhyani, Veerendra ;

Ahmad, Gufran ;

Kumar, Neeraj ;

Das, Samaresh .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2020, 67 (02) :558-565

[7] Rapid thermal annealing of size-controlled Si nanocrystals: Dependence of interface defect density on thermal budget [J].

Hiller, Daniel ;

Goetze, Silvana ;

Zacharias, Margit .

JOURNAL OF APPLIED PHYSICS, 2011, 109 (05)

[8] Improved electrical properties of silicon quantum dot layers for photovoltaic applications [J].

Hong, Songwoung ;

Baek, In Bok ;

Kwak, Gyea Young ;

Lee, Seong Hyun ;

Jang, Jong Shik ;

Kim, Kyung Joong ;

Kim, Ansoon .

SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2016, 150 :71-75

[9] Enhanced luminescence from encapsulated silicon nanocrystals in SiO2 with rapid thermal anneal [J].

Iwayama, T. S. ;

Hama, T. ;

Hole, D. E. ;

Boyd, I. W. .

VACUUM, 2006, 81 (02) :179-185

[10] Effect of structural variations in amorphous silicon based single and multi-junction solar cells from numerical analysis [J].

Kabir, M. I. ;

Ibrahim, Zahari ;

Sopian, Kamaruzzaman ;

Amin, Nowshad .

SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2010, 94 (09) :1542-1545

← 1 2 3 4 →