Effect of oxygen concentration in the sputtering ambient on the microstructure, electrical and optical properties of radio-frequency magnetron-sputtered indium tin oxide films

被引：82

作者：

Wu, WF ^{[1
]}

Chiou, BS ^{[1
]}

机构：

[1] NATL CHIAO TUNG UNIV,INST ELECTR,HSINCHU 30039,TAIWAN

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1996年 / 11卷 / 02期

关键词：

D O I：

10.1088/0268-1242/11/2/009

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Indium tin oxide (ITO) films have been prepared by radio-frequency (rf) magnetron sputtering. The effect oi oxygen concentration in the sputtering ambient on the structure and properties oi ITO films are investigated. The films have a preferred orientation in the (440) plane. The presence of oxygen during sputtering enhances the crystallization of the film. Film grain size increases as more oxygen is added. According to the XPS measurements, the addition of oxygen reduces the oxygen-deficient region of the film. Hence the optical transmittance of the film is improved while film conductivity decreases.

引用

页码：196 / 202

页数：7

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