A new power MOSFET having excellent avalanche capability

被引：0

作者：

Uesugi, T ^{[1
]}

Suzuki, T ^{[1
]}

Murata, T ^{[1
]}

Kawaji, S ^{[1
]}

Tadano, H ^{[1
]}

机构：

[1] Toyota Cent Res & Dev Labs Inc, Aichi 4801192, Japan

来源：

12TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & ICS - PROCEEDINGS | 2000年

关键词：

D O I：

10.1109/ISPSD.2000.856841

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, we explore anew concept for improvement of an avalanche capability of a power MOSFET: The concept is to make parasitic bipolar transistors in all over the chip turn on, and to suppress breakdown current crowding. The avalanche capability of an UMOSFET applied this new concept was 1500mJ. This value was about one order higher than that of a conventional UMOSFET.

引用

页码：349 / 352

页数：4

共 3 条

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[3] High voltage clamped IGBT for automotive ignition applications
Shen, ZJ
Robb, SP
[J]. ISPSD '98 - PROCEEDINGS OF THE 10TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & ICS, 1998, : 97 - 100

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