Hall Sensors for Extreme Temperatures

被引：45

作者：

Jankowski, Jakub ^{[1
]}

El-Ahmar, Semir ^{[1
]}

Oszwaldowski, Maciej ^{[1
]}

机构：

[1] Poznan Univ Tech, Inst Phys, PL-61965 Poznan, Poland

来源：

SENSORS | 2011年 / 11卷 / 01期

关键词：

Hall sensors; n-InSb/GaAs; extreme temperatures; magnetic sensors; HETEROSTRUCTURES; INSB;

D O I：

10.3390/s110100876

中图分类号：

O65 [分析化学];

学科分类号：

070302 ; 081704 ;

摘要：

We report on the preparation of the first complete extreme temperature Hall sensor. This means that the extreme-temperature magnetic sensitive semiconductor structure is built-in an extreme-temperature package especially designed for that purpose. The working temperature range of the sensor extends from -270 degrees C to +300 degrees C. The extreme-temperature Hall-sensor active element is a heavily n-doped InSb layer epitaxially grown on GaAs. The magnetic sensitivity of the sensor is ca. 100 mV/T and its temperature coefficient is less than 0.04 %/K. This sensor may find applications in the car, aircraft, spacecraft, military and oil and gas industries.

引用

页码：876 / 885

页数：10

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