Laser-induced modification of porous silicon

被引：3

作者：

Sorokin, L. M. ^{[1
]}

Sokolov, V. I. ^{[1
]}

Burtsev, A. P. ^{[1
]}

Kalmykov, A. E. ^{[1
]}

Grigor'ev, L. V. ^{[2
]}

机构：

[1] Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia

[2] St Petersburg State Univ, Fock Inst Phys, St Petersburg 198504, Russia

来源：

TECHNICAL PHYSICS LETTERS | 2007年 / 33卷 / 12期

关键词：

81.05.Cy; 81.05.Rm; 81.05.Zx; 81.07.Bc;

D O I：

10.1134/S1063785007120231

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We present the results of experiments on annealing the surface layer of porous silicon by pulsed IR laser radiation. The character of laser-induced modification has been studied using IR spectroscopy and transmission electron microscopy. It is shown that the proposed method can be used to obtain a S':SiO2 composite.

引用

页码：1065 / 1068

页数：4

共 9 条

[1]

ABILSIITOV GA, 1991, PROCESSING LASERS HD, V2, P544

[2]

ALFEROV ZI, 1985, IZV AN SSSR FIZ+, V49, P1069

[3]

BALAGUROV LA, 2000, P INT C POR SEM SCI, P53

[4] The structural and luminescence properties of porous silicon [J].

Cullis, AG ;

Canham, LT ;

Calcott, PDJ .

JOURNAL OF APPLIED PHYSICS, 1997, 82 (03) :909-965

[5] Porous silicon pn junction light emitting diodes [J].

Das, B ;

McGinnis, SP .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1999, 14 (11) :988-993

[6]

Gusev A. I., 2004, Nanocrystalline Materials

[7] Lattice distortion in nanostructured porous silicon -: art. no. 251921 [J].

Pascual, L ;

Martín-Palma, RJ ;

Landa-Cánovas, AR ;

Herrero, P ;

Martínez-Duart, JM .

APPLIED PHYSICS LETTERS, 2005, 87 (25) :1-3

[8]

SOKOLOV VI, 2005, PHYS SOLID STATE, V47, P1365

[9]

VENGER EF, 2001, OPTOELEKTRON POLUPRO, V36, P199

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