Reconstructions of the InP(111)A surface -: art. no. 085320

被引：21

作者：

Li, CH ^{[1
]}

Sun, Y ^{[1
]}

Law, DC ^{[1
]}

Visbeck, SB ^{[1
]}

Hicks, RF ^{[1
]}

机构：

[1] Univ Calif Los Angeles, Dept Chem Engn, Los Angeles, CA 90095 USA

来源：

PHYSICAL REVIEW B | 2003年 / 68卷 / 08期

关键词：

D O I：

10.1103/PhysRevB.68.085320

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Indium phosphide was deposited on InP(111)A substrates by metalorganic vapor-phase epitaxy. Then, the surface was characterized by scanning tunneling microscopy, low-energy electron diffraction, and x-ray photoelectron spectroscopy. Two reconstructions were observed: the (2x2) and the (root3xroot3)R30degrees with phosphorus coverages of 0.25 and 1.00+/-0.05 ML (monolayers), respectively. The (2x2) was found to adopt an indium-vacancy structure such as that observed on the (2x2) phase of GaAs (111)A. The (root3xroot3)R30degrees reconstruction has not been seen previously on III/V semiconductor surfaces. The experimental evidence suggests that this surface is terminated with a complete layer of phosphorus trimers.

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