Distribution of below-gap states in undoped GaAs/AlGaAs quantum wells revealed by two-wavelength excited photoluminescence

被引：9

作者：

Hoshino, K

Kimura, H

Uchida, T

Kamata, N

Yamada, K

Nishioka, M

Arakawa, Y

机构：

[1] Saitama Univ, Fac Engn, Dept Funct Mat Sci, Urawa, Saitama 338, Japan

[2] Univ Tokyo, Inst Ind Sci, Minato Ku, Tokyo 106, Japan

来源：

JOURNAL OF LUMINESCENCE | 1998年 / 79卷 / 01期

关键词：

photoluminescence; below-gap excitation; nonradiative recombination; quantum wells; GaAs/AlGaAs;

D O I：

10.1016/S0022-2313(98)00017-9

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

The spatial distribution of below-gap states in undoped GaAs/AlGaAs quantum-well structures and their effect on the luminescence intensity has been determined by a spectroscopic measurement of two-wavelength excited photoluminescence. Tuning the photon energy of above-gap excitation revealed that these below-gap states were formed neither in the GaAs well layers nor at the GaAs/AlGaAs hetero-interface, but in the AlGaAs barrier layers. The properties of below-gap states in AlGaAs were found to be strongly dependent on growth temperature. (C) 1998 Elsevier Science B.V. All rights reserved.

引用

页码：39 / 46

页数：8

共 13 条

[1] SOME OPTICAL PROPERTIES OF CU IN GAP [J].

GRIMMEISS, HG ;

MONEMAR, B .

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1973, 19 (02) :505-511

[2] ELECTRON-HOLE RECOMBINATION IN GERMANIUM [J].

HALL, RN .

PHYSICAL REVIEW, 1952, 87 (02) :387-387

[3] Upconversion induced by deep defects in GaAs [J].

Iino, T ;

Weber, J .

ICDS-18 - PROCEEDINGS OF THE 18TH INTERNATIONAL CONFERENCE ON DEFECTS IN SEMICONDUCTORS, PTS 1-4, 1995, 196- :993-999

[4] Sensitive detection of below-gap states by two-wavelength excitation spectroscopy in single-photon-counting region [J].

Kamata, N ;

Hoshino, K ;

Kimura, H ;

Uchida, T ;

Yamada, K ;

Nishioka, M ;

Arakawa, Y .

JOURNAL OF LUMINESCENCE, 1997, 72-4 :797-798

[5] Saturation of luminescence quenching due to nonradiative centers in a GaAs/AlGaAs quantum well [J].

Kamata, N ;

Kanoh, E ;

Hoshino, K ;

Yamada, K ;

Nishioka, M ;

Arakawa, Y .

ICDS-18 - PROCEEDINGS OF THE 18TH INTERNATIONAL CONFERENCE ON DEFECTS IN SEMICONDUCTORS, PTS 1-4, 1995, 196- :431-435

[6]

KAMATA N, 1993, MATER SCI FORUM, V117, P345, DOI 10.4028/www.scientific.net/MSF.117-118.345

[7] SATURATION OF PHOTOLUMINESCENCE QUENCHING UNDER BELOW-GAP EXCITATION IN A GAAS/ALGAAS QUANTUM-WELL [J].

KANOH, E ;

HOSHINO, K ;

KAMATA, N ;

YAMADA, K ;

NISHIOKA, M ;

ARAKAWA, Y .

JOURNAL OF LUMINESCENCE, 1995, 63 (5-6) :235-240

[8] OPTICAL-TRANSITIONS VIA DEEP O-DONOR IN GAP .1. PHONON INTERACTION IN LOW-TEMPERATURE SPECTRA [J].

MONEMAR, B ;

SAMUELSON, L .

PHYSICAL REVIEW B, 1978, 18 (02) :809-829

[9]

MONEMAR B, 1982, PROG CRYST GROWTH CH, V5, P47, DOI 10.1016/0146-3535(82)90009-0

[10] STATISTICS OF THE RECOMBINATIONS OF HOLES AND ELECTRONS [J].

SHOCKLEY, W ;

READ, WT .

PHYSICAL REVIEW, 1952, 87 (05) :835-842

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