Raman active phonon and crystal-field studies of Yb3+ doped NdVO4

被引：9

作者：

Jandl, S. ^{[1
]}

Levesque, Y. ^{[1
]}

Nekvasil, V. ^{[2
]}

Bettinelli, M. ^{[3
,4
]}

机构：

[1] Univ Sherbrooke, Dept Phys, Sherbrooke, PQ J1K 2R1, Canada

[2] Acad Sci Czech Republic, Inst Phys, CZ-16253 Prague 6, Czech Republic

[3] Univ Verona, Lab Solid State Chem, DB, I-37134 Verona, Italy

[4] INSTM, UdR Verona, I-37134 Verona, Italy

来源：

OPTICAL MATERIALS | 2010年 / 32卷 / 11期

关键词：

Crystal-field; Laser material; Infrared; Raman; Interacting ion pair; RARE-EARTH ORTHOVANADATES; LASER MATERIALS; PHOSPHATES; GROWTH; IONS;

D O I：

10.1016/j.optmat.2010.07.004

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The F-2(7/2) and F-2(5/2) crystal field energy levels of the Yb3+ ion are measured by infrared absorption in Yb doped NdVO4, with concentrations ranging from 0.25% to 15%, as a function of doping, temperature and magnetic field. Two substitution sites are observed and the presence of Yb3+-Yb3+ interacting pairs is confirmed. Also, the Raman active phonons are detected and analyzed in order to determine the doping effects on the crystalline quality and the phonon contributions to the crystal field vibronics. (c) 2010 Elsevier B.V. All rights reserved.

引用

页码：1549 / 1552

页数：4

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