Strain effects in and crystal structures of self-assembled InAs/GaAs quantum dots

被引：9

作者：

Lee, HS

Lee, JY

Kim, TW

Kim, MD

机构：

[1] Hanyang Univ, Adv Semicond Res Ctr, Div Elect & Comp Engn, Seoul 133791, South Korea

[2] Korea Adv Inst Sci & Technol, Dept Mat Sci & Engn, Taejon 305701, South Korea

[3] Korea Res Inst Stand & Sci, Div Chem Metrol & Mat Evaluat, Quantum Dot Technol Lab, Taejon 305600, South Korea

来源：

APPLIED PHYSICS LETTERS | 2003年 / 83卷 / 11期

关键词：

D O I：

10.1063/1.1612894

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The strain effects in and the crystal structures of self-assembled InAs/GaAs quantum dots (QDs) were investigated by using transmission electron microscopy (TEM). The in-plane lattice constant of the InAs QDs was larger than that of the GaAs substrate, and the vertical lattice constant of the InAs QDs was smaller than that of the InAs bulk. The variation of the lattice constant for the InAs QD originated from the strain effect. A schematic diagram of a strained InAs QD based on the TEM results, indicative of the strain distribution around the QD, is presented. (C) 2003 American Institute of Physics.

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页码：2256 / 2258

页数：3

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