Electronic transport in Ce0.8Sm0.2O1.9-δ ceramics under reducing conditions

被引:49
作者
Abrantes, JCC
Pérez-Coll, D
Núñez, P
Frade, JR [1 ]
机构
[1] Univ Aveiro, CICECO, Dept Engn Ceram & Vidro, P-3810193 Aveiro, Portugal
[2] Univ La Laguna, Dept Quim Inorgan, E-38200 San Cristobal la Laguna, Spain
[3] Inst Politecn Viana Do Castelo, ESTG, P-4900 Viana Do Castelo, Portugal
关键词
ceria-samaria; electronic conductivity; oxygen nonstoichiometry; polaron mobility;
D O I
10.1016/S0013-4686(03)00395-5
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
Ce0.8Sm0.2O1.9-delta powders were prepared by a freeze drying method and used to obtain ceramic disks. These samples were used to study the electronic transport properties of this material. A Hebb-Wagner method was used to obtain the electronic conductivity under ion blocking conditions. Typical values of electronic conductivity measured for this material at 800 degreesC were about 0.37 S m(-1) at Po-2 = 10(-16) atm and 0.58 S m(-1) at Po-2 = 10(-18) atm. These values are significantly lower than results reported for ceria-based materials with different trivalent additives. A coulometric titration method was used to estimate the charge carrier concentrations, and the mobility of carriers was obtained on combining the results of conductivity and concentration. Typical values of mobility show weak temperature dependence and decrease with increasing oxygen deficiency, suggesting a limiting value of about 0.5 x 10(-7) m(2). V-1 s(-1) for relatively high delta. (C) 2003 Elsevier Ltd. All rights reserved.
引用
收藏
页码:2761 / 2766
页数:6
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