Scanning tunneling microscopy images of the atoms in the corner holes on the Si(111)-(7 x 7) surface with bismuth-covered tips

被引：4
|
作者：
Bulavenko, SY [1 ]
Melnik, PV [1 ]
Nakhodkin, MG [1 ]
机构：
[1] Kyiv Taras Shevchenko Univ, Radiophys Dept, UA-03033 Kyiv, Ukraine
来源：
SURFACE SCIENCE | 2000年 / 469卷 / 2-3期
关键词：
bismuth; scanning tunneling microscopy; semiconducting surfaces; silicon;
D O I：
10.1016/S0039-6028(00)00798-6
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
The use of special tips in scanning tunneling microscopy experiments for studying the Si(111)-(7 x 7) surface is considered. The special tips are created by bismuth deposition on tungsten tips. Images of the atoms in the corner holes are obtained for the first time and the unartificial nature of the images has been checked by the adsorption of a low amount of atomic hydrogen on the Si(111)-(7 x 7) surface. (C) 2000 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：127 / 132
页数：6
相关论文
共 50 条
  • [1] Surface dynamics and scanning tunneling microscopy: Diffusion of Pb atoms on Si(111)-(7x7)
    GomezRodriguez, JM
    Veuillen, JY
    Cinti, RC
    SURFACE REVIEW AND LETTERS, 1997, 4 (02) : 335 - 342
  • [2] Initial adsorption process of Si atoms on an Si(111)7x7 surface studied by scanning tunneling microscopy
    Sato, T
    Kitamura, S
    Iwatsuki, M
    SURFACE SCIENCE, 2000, 445 (01) : 130 - 137
  • [3] Scanning tunneling microscopy of charge transfer on the Si(111)7X7 surface
    Jeon, D
    Hashizume, T
    Sakurai, T
    APPLIED SURFACE SCIENCE, 1996, 94-5 : 493 - 496
  • [4] SURFACE PHOTOVOLTAGE OF AG ON SI(111)-7X7 BY SCANNING TUNNELING MICROSCOPY
    CAHILL, DG
    HAMERS, RJ
    PHYSICAL REVIEW B, 1991, 44 (03): : 1387 - 1390
  • [5] Study of benzene and toluene on Si(111)7 x 7 surface by scanning tunneling microscopy
    Tomimoto, H
    Takehara, T
    Fukawa, K
    Sumii, R
    Sekitani, T
    Tanaka, K
    SURFACE SCIENCE, 2003, 526 (03) : 341 - 350
  • [6] Study of aniline on a Si(111)7X7 surface by scanning tunneling microscopy
    Tomimoto, H
    Sumii, R
    Shirota, N
    Yagi, S
    Taniguchi, M
    Sekitani, T
    Tanaka, K
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2000, 18 (05): : 2335 - 2338
  • [7] Periodic corner holes on the Si(111)-7x7 surface can trap silver atoms
    Osiecki, Jacek R.
    Suto, Shozo
    Chutia, Arunabhiram
    NATURE COMMUNICATIONS, 2022, 13 (01)
  • [8] Surface diffusion of adsorbed Si atoms on the Si(111)7x7 surface studied by atom-tracking scanning tunneling microscopy
    Sato, T
    Kitamura, S
    Iwatsuki, M
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 2000, 18 (03): : 960 - 964
  • [9] Adsorption of Au atoms on Si(111)-(7x7) studied by using scanning tunneling microscopy
    Zhang, Lei
    Kim, Younghoon
    Shim, Hyungjoon
    Lee, Geunseop
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2007, 51 (03) : 947 - 950
  • [10] Regular defects on the Si(111)-(7x7) surface studied by scanning tunneling microscopy
    Yang, HQ
    Gao, JN
    Zhao, YF
    Xue, ZQ
    Pang, SJ
    SURFACE SCIENCE, 1998, 406 (1-3) : 229 - 234
12345