A novel program-erasable high-K A1N-Si MIS capacitor

被引：13

作者：

Lai, CH ^{[1
]}

Chin, A

Hung, BF

Cheng, CF

Yoo, WJ

Li, MF

Zhu, CX

McAlister, SP

Kwong, DL

机构：

[1] Natl Chiao Tung Univ, Dept Elect Engn, Hsinchu 300, Taiwan

[2] Natl Univ Singapore, Dept Elect & Comp Engn, Silicon Nano Device Lab, Singapore 119260, Singapore

[3] Natl Res Council Canada, Ottawa, ON, Canada

[4] Univ Texas, Dept Elect & Comp Engn, Austin, TX 78752 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 2005年 / 26卷 / 03期

关键词：

capacitor; erase; high-K; program;

D O I：

10.1109/LED.2004.842100

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We demonstrate a programmable-erasable MIS capacitor with a single layer high-kappa AIN dielectric on Si having a high capacitance density of 5 fF/mum(2). It has low program and erase voltages of +4 and -4 V, respectively. Such an erase function is not available in other single layer Al2O3, AION, or other known high-kappa dielectric capacitors, where the threshold voltage (T h) shifts continuously with voltage. This device exhibits good data retention with a V-th change of only 0.06 V after 10 000 s.

引用

页码：148 / 150

页数：3

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