Steering the Efficiency of Carbon Nanotube-Silicon Photovoltaic Cells by Acid Vapor Exposure: A Real-Time Spectroscopic Tracking

被引：18
作者：
Pintossi, C. [1 ,2 ]
Pagliara, S. [1 ,2 ]
Drera, G. [1 ,2 ]
De Nicola, F. [3 ,4 ]
Castrucci, P. [3 ,4 ]
De Crescenzi, M. [3 ,4 ]
Crivellari, M.
Boscardin, M. [5 ]
Sangaetti, L. [1 ,2 ]
机构：
[1] Univ Cattolica Sacro Cuore, Interdisciplinary Labs Adv Mat Phys I LAMP, I-25121 Brescia, Italy
[2] Univ Cattolica Sacro Cuore, Dipartimento Matemat & Fis, I-25121 Brescia, Italy
[3] Univ Roma Tor Vergata, Dipartimento Fis, I-00133 Rome, Italy
[4] Univ Roma Tor Vergata INFN Roma Tor Vergata, Ist Nazl Fis Nucl, I-00133 Rome, Italy
[5] Fdn Bruno Kessler, I-38100 Trento, Italy
来源：
ACS APPLIED MATERIALS & INTERFACES | 2015年 / 7卷 / 18期
关键词：
carbon nanotubes; photovoltaics; CNT-Si hybrid junctions; photoemission; Raman spectroscopy; J-V characteristics; HETEROJUNCTION SOLAR-CELLS; SI; PERFORMANCE; OXIDATION; LAYER;
D O I：
10.1021/am508973b
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Hybrid carbon nanotube-silicon (CNT-Si) junctions have been investigated by angle resolved photoemission spectroscopy (AR-XPS) with the aim to clarify the effects of a nonstoichiometric silicon Oxide buried interface on the overall cell efficiency. A complex silicon oxide interface has been clearly identified and its origin and role in the heterojunction have been probed by exposing the cells to hydrofluoric (HF) and nitric (HNO3) acid. Real-time monitoring of the cell efficiencies during the steps following acid exposure (up to 1 week after etching) revealed a correlation between the thickness and chemical state of the oxide layer and the cell efficiencies: By matching the AR-XPS and Raman spectroscopy with the electrical response data it has been possible to discriminate the effects on the cell efficiency of the buried SiOx interface from those related to CNT acid doping. The overall cell behavior recorded for different thickness of the SiOx interface indicates that the buried oxide layer is likely acting as a passivating/inversion layer in a metal-insulator-semiconductor junction.
引用
收藏
页码：9436 / 9444
页数：9
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