Opto-Electronic Properties of Cu2ZnSnS4 Thin Films Grown by Ultrasonic Spray Pyrolysis

被引：16

作者：

Deepa, K. G. ^{[1
]}

Sajeesh, T. H. ^{[2
]}

Jampana, Nagaraju ^{[1
]}

机构：

[1] Indian Inst Sci, Dept Instrumentat & Appl Phys, Bangalore 560012, Karnataka, India

[2] St Albertss Coll, Dept Phys, Ernakulam 682018, Kerala, India

来源：

JOURNAL OF ELECTRONIC MATERIALS | 2018年 / 47卷 / 01期

关键词：

Thin films; ultrasonic spray pyrolysis; solar cell material; intrinsic defects; SOLAR-CELL; DEPOSITION;

D O I：

10.1007/s11664-017-5803-3

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Cu2ZnSnS4 (CZTS) films are deposited by ultrasonic spray pyrolysis technique for photovoltaic applications. The optoelectronic properties are studied by varying Zn and Sn compositions in the film. Films showed a tetragonal kesterite structure with preferential orientation along the (112) plane. The sample with the highest Cu concentration showed the lowest band gap of 1.46 eV. The grain size of the films is greater than 1 mu m. Temperature-dependent conductivity studies revealed the presence of defects such as V-Cu, V-S, V-Sn, Cu-Zn, Zn-Cu, Zn-Sn and Sn-Zn in the films. The sample with a Cu/(Zn + Sn) ratio of 0.75 showed Cu-poor and Zn-rich composition and better opto-electronic properties. The sample has p-type conductivity with a resistivity of 12 Omega cm. A [V-Cu-Zn-Cu] defect complex is identified in this sample along with a Zn-Sn acceptor level which is favorable for solar cells.

引用

页码：530 / 535

页数：6

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