共 14 条
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A first-principles study of Mg-related defects in GaN
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DEFECTS IN SEMICONDUCTORS - ICDS-19, PTS 1-3,
1997, 258-2
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Properties of the yellow luminescence in undoped GaN epitaxial layers
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PHYSICAL REVIEW B,
1995, 52 (23)
:16702-16706
[6]
Luminescence and reflectivity studies of undoped, n- and p-doped GaN on (0001) sapphire
[J].
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY,
1997, 50 (1-3)
:97-104
[8]
Behavior of 2.8-and 3.2-eV photoluminescence bands in Mg-doped GaN at different temperatures and excitation densities
[J].
PHYSICAL REVIEW B,
1999, 59 (20)
:13176-13183
[10]
Blue emission in Mg doped GaN studied by time resolved spectroscopy
[J].
DEFECTS IN SEMICONDUCTORS - ICDS-19, PTS 1-3,
1997, 258-2
:1155-1160