Monolithic integration of GaInAs/InP quantum well infrared photodetectors on Si substrate

Using low-pressure metalorganic chemical vapor deposition, we have grown GaInAs/InP QWIP structures on GaAs-coated Si substrate. First, the procedure to optimize the epitaxy of the InP buffer layer on Si substrate is given. Excellent crystallinity and a mirror-like surface morphology were obtained by using both a two-step growth process at the beginning of the InP buffer layer growth and several series of thermal cycle annealing throughout the InP buffer layer growth. Second, results of fabricated GaInAs/InP QWIPs on Si substrate are presented. At a temperature of 80 K, the peak response wavelength occurs at 7.4 mum. The responsivities of QWIPs on both Si and InP substrates with identical structures are equal up to biases of 1.5 V. At a bias of 3 V, the responisivity of the QWIPs on Si substrate is 1.0 A/W.