Cu-Cu Direct Bonding Through Highly Oriented Cu Grains for 3D-LSI Applications

被引：5

作者：

Murugesan, M. ^{[1
]}

Sone, E. ^{[2
]}

Simomura, A. ^{[2
]}

Motoyoshi, M. ^{[3
]}

Sawa, M. ^{[2
]}

Fukuda, K. ^{[2
]}

Koyanagi, M. ^{[3
]}

Fukushima, T. ^{[1
]}

机构：

[1] Tohoku Univ, NICHe, GINTI, Sendai, Miyagi, Japan

[2] JCU Corp, Tokyo, Japan

[3] T Micro, Sendai, Miyagi, Japan

来源：

2021 IEEE INTERNATIONAL 3D SYSTEMS INTEGRATION CONFERENCE (3DIC) | 2021年

关键词：

(100) oriented Cu-grain; Cu-Cu direct bonding;

D O I：

10.1109/3DIC52383.2021.9687604

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

The effect of an extremely large and relatively ordered Cu grains the yield of Cu-Cu direct bonding was investigated. Our modified electroplating process followed by post processing has resulted into the formation of 10 - 15 mu m large Cu grains before Cu-Cu direct bonding. The microstructural evaluation showed formation relatively (100) oriented Cu-grains. The less hard and strain-suppressed Cu-grains as inferred from respectively, Vickers hardness and tensile test highly facilitates the Cu diffusion across the oriented grains during the Cu-Cu direct/hybrid bonding.

引用

页数：4

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