Silicon surface cleaning for low temperature silicon epitaxial growth

被引：7

作者：

Mayusumi, M ^{[1
]}

Imai, M

Nakahara, S

Inoue, K

Takahashi, J

Ohmi, T

机构：

[1] Super Silicon Crystal Res Inst Corp, Annaka, Gunma, Japan

[2] Tohoku Univ, Aoba Ku, Sendai, Miyagi, Japan

来源：

SOLID STATE PHENOMENA | 1999年 / 65-6卷

关键词：

pre-treatment; protective film; silicon epitaxial growth;

D O I：

10.4028/www.scientific.net/SSP.65-66.229

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A thin oxide protective film was formed on a clean silicon surface by using ozonized ultra pure water. To prepare a clean surface for epitaxial growth, the protective film was then decomposed by heat treatment in a hydrogen atmosphere. XPS analysis was used to confirm the oxide and oxygen composition; no contaminants were detected. An improvement in surface roughness was observed after the heat treatment in hydrogen atmosphere at 950 degrees C.

引用

页码：229 / 232

页数：4

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