Self-organization of CrSi2 nanoislands on Si(111) and growth of monocrystalline silicon with buried multilayers of CrSi2 nanocrystallites

被引：10

作者：

Galkin, Nickolay G. ^{[1
]}

Goroshko, Dmitrii L. ^{[1
]}

Dotsenko, Sergey A. ^{[1
]}

Turchin, Taras V. ^{[1
]}

机构：

[1] Russian Acad Sci, Inst Automat & Control Proc, Far Eastern Branch, Vladivostok 690041, Russia

来源：

JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY | 2008年 / 8卷 / 02期

关键词：

silicon; chromium disilicide; islands; epitaxial growth; nanocrystallites; monolithic heterostructures;

D O I：

10.1166/jnn.2008.A076

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

The process of self-organization of CrSi2 nanosize islands on Si(111)7 x 7 surface has been investigated during reactive deposition (RDE) of Cr at 500 degrees C by methods of low energy diffraction (LEED) and differential reflectance spectroscopy (DRS). Morphology of grown samples has been studied by atomic force microscopy (AFM). DRS data have demonstrated the semiconductor nature of silicide islands from the beginning of Cr deposition at 500 degrees C. The optimal temperature (750 degrees C) and optimal Si thickness (50 nm) have been determined for silicon molecular epitaxy (MBE) growth atop CrSi2 nanosize islands. Monolithic silicon-silicide heterostructures with multilayers of CrSi2 nanosize crystallites have been grown.

引用

页码：557 / 563

页数：7

共 13 条

[1]

Borisenko V. E., 2000, Semiconducting Silicides

[2] Differential-reflectance spectroscopy and reflectance-anisotropy spectroscopy on semiconductor surfaces [J].