Analysis and numerical design of Resistive AC-Coupled Silicon Detectors (RSD) for 4D particle tracking

被引:22
作者
Mandurrino, M. [1 ]
Arcidiacono, R. [1 ,2 ]
Boscardin, M. [3 ,4 ]
Cartiglia, N. [1 ]
Dalla Betta, G-F [4 ,5 ]
Ferrero, M. [1 ,6 ]
Ficorella, F. [3 ,4 ]
Pancheri, L. [4 ,5 ]
Paternoster, G. [3 ,4 ]
Siviero, F. [1 ,6 ]
Sola, V [1 ,6 ]
Staiano, A. [1 ]
Vignati, A. [1 ]
机构
[1] Ist Nazl Fis Nucl, Sez Torino, Via P Giuria 1, I-10125 Turin, Italy
[2] Univ Piemonte Orientale, Largo Donegani 2-3, I-20100 Novara, Italy
[3] Fdn Bruno Kessler, Via Sommar 18, I-38123 Povo, TN, Italy
[4] Ist Nazl Fis Nucl, TIFPA, Via Sommar 18, I-38123 Povo, TN, Italy
[5] Univ Trento, Via Sommar 9, I-38123 Povo, TN, Italy
[6] Univ Turin, Via P Giuria 1, I-10125 Turin, Italy
关键词
TCAD modeling; Charge multiplication; Solid-state silicon detectors; Particle tracking detectors; Particle timing detectors; Fast detectors; IONIZATION RATES;
D O I
10.1016/j.nima.2020.163479
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
In this paper we present the numerical simulation of silicon detectors with internal gain as the main tool for 4-dimensional (4D) particle trackers design and optimization. The Low-Gain Avalanche Diode (LGAD) technology and its present limitations are reviewed with the aim of introducing the Resistive AC-Coupled Silicon Detectors (RSD) paradigm as a case study of our investigation. Authors here present Spice-like and 2D/3D Technological Computer-Aided Design (TCAD) simulations to characterize sensors in terms of both their electrostatic behavior, capacitive (dynamic) coupling and radiation-hardness performances, showing the methodological approach used in order to extract the set of layout rules allowing the release of RSD1, the incoming production run at Fondazione Bruno Kessler (FBK) of next-generation silicon detectors for 4D tracking with intrinsic 100% fill-factor.
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收藏
页数:13
相关论文
共 27 条
[21]  
Sadrozinski H., 2017, 12 TRENT WORKSH ADV
[22]   4D tracking with ultra-fast silicon detectors [J].
Sadrozinski, Hartmut F-W ;
Seiden, Abraham ;
Cartiglia, Nicolo .
REPORTS ON PROGRESS IN PHYSICS, 2018, 81 (02)
[23]   Currents to conductors induced by a moving point charge [J].
Shockley, W .
JOURNAL OF APPLIED PHYSICS, 1938, 9 (10) :635-636
[24]   First FBK production of 50 μm ultra-fast silicon detectors [J].
Sola, V. ;
Arcidiacono, R. ;
Boscardin, M. ;
Cartiglia, N. ;
Dalla Betta, G. -F. ;
Ficorella, F. ;
Ferrero, M. ;
Mandurrino, M. ;
Pancheri, L. ;
Paternoster, G. ;
Staiano, A. .
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 2019, 924 :360-368
[25]   MEASUREMENT OF IONIZATION RATES IN DIFFUSED SILICON P-N JUNCTIONS [J].
VANOVERSTRAETEN, R ;
DEMAN, H .
SOLID-STATE ELECTRONICS, 1970, 13 (05) :583-+
[26]  
Watkins G.D., 1976, DEFECTS THEIR STRUCT, DOI [10.1007/978-1-4684-2802-5_7, DOI 10.1007/978-1-4684-2802-5_7]
[27]   Investigations of donor and acceptor removal and long term annealing in silicon with different boron/phosphorus ratios [J].
Wunstorf, R ;
Bugg, WM ;
Walter, J ;
Garber, FW ;
Larson, D .
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 1996, 377 (2-3) :228-233