Epitaxial Pb(Zr0.52Ti0.48)O3/Y1Ba2Cu3O7-x heterostructure prepared by pulsed laser deposition

被引:2
作者
Huang, BP
Zheng, LR
Gao, JX
Wang, LW
Huang, JP
Lin, CL
机构
[1] State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Metallurgy, Chinese Academy of Sciences
关键词
D O I
10.1088/0256-307X/15/10/024
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
C-axis oriented Y1Ba2Cu3O7-x (YBCO) thin films and PbZr0.52 Ti0.48O3 (PZT)/(YBCO) heterostructures were deposited on single-crystal LaAlO3 by Nd:YAG pulsed laser deposition. The results showed that the YBCO films exhibited superconducting transition temperature above 86 K and ion beam channeling minimum yields chi(min) of 49%, indicating the relatively good quality of YBCO films deposited on the LaAlO3 substrate. The PZT films in situ grown on the YBCO films were epitaxially c-axis oriented with a saturation polarization and remanence as high as 57 mu C/cm(2) and 39 mu C/cm(2) (at 204kV/cm), respectively. The coercive field of PZT films is about 55 kV/cm.
引用
收藏
页码:764 / 766
页数:3
相关论文
共 12 条
[1]   FERROELECTRIC FIELD-EFFECT IN EPITAXIAL THIN-FILM OXIDE SRCUO2/PB(ZR0.52TI0.48)O-3 HETEROSTRUCTURES [J].
AHN, CH ;
TRISCONE, JM ;
ARCHIBALD, N ;
DECROUX, M ;
HAMMOND, RH ;
GEBALLE, TH ;
FISCHER, O ;
BEASLEY, MR .
SCIENCE, 1995, 269 (5222) :373-376
[2]   Local, nonvolatile electronic writing of epitaxial Pb(Zr0.52Ti0.48)O-3/SrRuO3 heterostructures [J].
Ahn, CH ;
Tybell, T ;
Antognazza, L ;
Char, K ;
Hammond, RH ;
Beasley, MR ;
Fischer, O ;
Triscone, JM .
SCIENCE, 1997, 276 (5315) :1100-1103
[3]  
BJORMANDER C, 1994, APPL PHYS LETT, V64, P3646, DOI 10.1063/1.111191
[4]   DEPENDENCE OF CRYSTALLINE ORIENTATION ON FILM THICKNESS IN LASER-ABLATED YBA2CU3O7-DELTA ON LAALO3 [J].
CARIM, AH ;
BASU, SN ;
MUENCHAUSEN, RE .
APPLIED PHYSICS LETTERS, 1991, 58 (08) :871-873
[5]   YBCO THIN-FILMS ON FERROELECTRIC SUBSTRATES - THE POLARIZATION-INDUCED CHANGES OF SUPERCONDUCTIVE PROPERTIES [J].
LEMANOV, VV ;
KHOLKIN, AL ;
SHERMAN, AB .
SUPERCONDUCTOR SCIENCE & TECHNOLOGY, 1993, 6 (12) :814-818
[6]   TRANSIENT-BEHAVIOR AND MEMORY EFFECT OF A PBZRXTI1-XO3/YBA2CU3O7-X 3-TERMINAL DEVICE [J].
LIN, H ;
WU, NJ ;
XIE, K ;
LI, XY ;
IGNATIEV, A .
APPLIED PHYSICS LETTERS, 1994, 65 (08) :953-955
[7]   PHOTORESPONSE AND FAST OPTICAL READOUT FOR A PBZRXTI1-XO3/YBA2CU3O7-X THIN-FILM HETEROSTRUCTURE CAPACITOR [J].
LIN, H ;
WU, NJ ;
GEIGER, F ;
XIE, K ;
IGNATIEV, A .
APPLIED PHYSICS LETTERS, 1995, 66 (10) :1172-1174
[8]  
LIN H, 1994, INTEGR FERROELECTR, V5, P197
[9]   FERROELECTRIC PBZR0.2TI0.8O3 THIN-FILMS ON EPITAXIAL Y-BA-CU-O [J].
RAMESH, R ;
INAM, A ;
CHAN, WK ;
TILLEROT, F ;
WILKENS, B ;
CHANG, CC ;
SANDS, T ;
TARASCON, JM ;
KERAMIDAS, VG .
APPLIED PHYSICS LETTERS, 1991, 59 (27) :3542-3544
[10]   FATIGUE AND RETENTION IN FERROELECTRIC Y-BA-CU-O/PB-ZR-TI-O/Y-BA-CU-O HETEROSTRUCTURES [J].
RAMESH, R ;
CHAN, WK ;
WILKENS, B ;
GILCHRIST, H ;
SANDS, T ;
TARASCON, JM ;
KERAMIDAS, VG ;
FORK, DK ;
LEE, J ;
SAFARI, A .
APPLIED PHYSICS LETTERS, 1992, 61 (13) :1537-1539