Piezoresistive 4H-Silicon Carbide (SiC) pressure sensor

被引：10

作者：

Mackowiak, Piotr ^{[1
]}

Erbacher, Kolja ^{[1
]}

Baeuscher, Manuel ^{[1
]}

Schiffer, Michael ^{[1
]}

Lang, Klaus-Dieter ^{[2
]}

Schneider-Ramelow, Martin ^{[2
]}

Ha-Duong Ngo ^{[3
]}

机构：

[1] Fraunhofer IZM, Berlin, Germany

[2] Tech Univ Berlin, Berlin, Germany

[3] Univ Appl Sci, Berlin, Germany

来源：

2021 IEEE SENSORS | 2021年

关键词：

Piezoresistive; 4H Silicon Carbide; SiC; Pressure Sensor; High Temperature;

D O I：

10.1109/SENSORS47087.2021.9639506

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A novel 4H SiC piezoresistive pressure sensor has been fabricated using a high temperature metallization system. The sensor has been fabricated using 100 mm 4H-SiC Wafers with an double EPI layer. While the top has been etched to form the piezoresistors, the lower Epi-layer is oppositely doped acts as an isolation layer. The formation of the membrane has been performed by a reactive ion etching (RIE) process enabling etch rates of up to 4 mu m/min through bulk SiC. The gold-based metallization system is able to withstand high temperatures.

引用

页数：4

共 6 条

[1] INVESTIGATION OF DEEP DRY ETCHING OF 4H SIC MATERIAL FOR MEMS APPLICATIONS USING DOE MODELLING [J].

Erbacher, Kolja ;

Mackowiak, Piotr ;

Schiffer, Michael ;

Lang, Klaus-Dieter ;

Schneider-Ramelow, Martin ;

Ngo, Ha-Duong .

2021 34TH IEEE INTERNATIONAL CONFERENCE ON MICRO ELECTRO MECHANICAL SYSTEMS (MEMS 2021), 2021, :634-637

[2] Effects of Al ion implantation to 4H-SiC on the specific contact resistance of TiAl-based contact materials [J].

Ito, Kazuhiro ;

Tsukimoto, Susumu ;

Murakami, Masanori .

SCIENCE AND TECHNOLOGY OF ADVANCED MATERIALS, 2006, 7 (06) :496-501

[3] Comparison of the Etch Mask Selectivity of Nickel and Copper for a Deep, Anisotropic Plasma Etching Process of Silicon Carbide (SiC) [J].

Ozgur, Mehmet ;

Pedersen, Michael ;

Huff, Michael .

ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, 2018, 7 (02) :P55-P59

[4]

Senturia SD, 2003, BOSTON TRANSDUCERS'03: DIGEST OF TECHNICAL PAPERS, VOLS 1 AND 2, P10

[5] Thermoresistance of p-Type 4H-SiC Integrated MEMS Devices for High-Temperature Sensing [J].

Toan Dinh ;

Tuan-Khoa Nguyen ;

Hoang-Phuong Phan ;

Quan Nguyen ;

Han, Jisheng ;

Dimitrijev, Sima ;

Nam-Trung Nguyen ;

Dzung Viet Dao .

ADVANCED ENGINEERING MATERIALS, 2019, 21 (03)

[6] Specimen size effect of tensile strength of surface-micromachined polycrystalline silicon thin films [J].

Tsuchiya, T ;

Tabata, O ;

Sakata, J ;

Taga, Y .

JOURNAL OF MICROELECTROMECHANICAL SYSTEMS, 1998, 7 (01) :106-113

← 1 →