Characterization of (Ba0.5Sr0.5)TiO3 thin films deposited onto metalorganic chemical vapor deposited (Ba,Sr)RuO3 (BSR) seed layers for voltage tunable devices

被引：0
|
作者：
Jeon, YA [1 ]
Choi, ES [1 ]
Yoon, SG [1 ]
机构：
[1] Chungnam Natl Univ, Dept Mat Engn, Taejon 305764, South Korea
来源：
INTEGRATED FERROELECTRICS | 2001年 / 39卷 / 1-4期
关键词：
(Ba; Sr)RuO3; (BSR); Sr)TiO3; (BST); seed layers;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The conducting oxide (Ba,Sr)RuO3 (BSR), which offered not only the appropriate match in structure but also the chemical compatibility with (Ba,Sr)TiO3 (BST), was investigated as seed layers to obtain a high tunability and dielectric constant of BST films. The tunability and dielectric constant of the (100) textured BST films abruptly increased with increasing BSR seed layer thickness and showed about 68 % and 1300 at seed layer of 150 A, respectively. Higher tunability and dielectric constant of BST films deposited onto BSR seed layers have been attributed to the suppression of low dielectric layer formation and to the nonexistence of thermal stress by lattice mismatch at BST/Pt interface.
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收藏
页码：1231 / 1239
页数：9
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