Preparation of amorphous bismuth oxide films by electrodeposition

被引：2

作者：

Takeuchi, M

Takeyama, T

Takahashi, N

Nakamura, T

机构：

[1] Shizuoka Univ, Grad Sch Sci & Technol, Hamamatsu, Shizuoka 4328561, Japan

[2] Shizuoka Univ, Fac Engn, Dept Mat Sci & Technol, Hamamatsu, Shizuoka 4328561, Japan

来源：

ELECTROCHEMISTRY | 2005年 / 73卷 / 12期

关键词：

bismuth oxide; amorphous; electrodeposition; modified oxide;

D O I：

10.5796/electrochemistry.73.1030

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Amorphous bismuth oxide (Bi2O3) films have been grown on indium tin oxide (ITO) coating glass substrate by means of electrodeposition. Deposited Bi2O3 films Were characterized by structure, morphology, optical properties, and ultimate analysis. X-ray diffiraction (XRD) measurements revealed that Bi2O3 amorphous films were grown below 45 degrees C and above 3 mA cm(-2). X-ray photoelectron spectroscopy (XPS) spectra showed that the amorphous films contained potassium descended from supporting electrolyte of KOH. These results suggested that the Bi2O3 films were maintained amorphous phase by inclusion of potassium acted as modified oxide. Refractive index of the Bi2O3 amorphous film grown at 45 degrees C and 3 mA cm(-2) was 1.86, and infrared penetrability of that film was 93%.

引用

页码：1030 / 1034

页数：5

共 5 条

[1] Low-temperature electrodeposition of the high-temperature cubic polymorph of bismuth(III) oxide [J].