Dielectric breakdown in Co-Fe-B/MgO/Co-Fe-B magnetic tunnel junction

被引：42

作者：

Khan, Ayaz Arif ^{[1
]}

Schmalhorst, J. ^{[1
]}

Thomas, A. ^{[1
]}

Schebaum, O. ^{[1
]}

Reiss, G. ^{[1
]}

机构：

[1] Univ Bielefeld, Dept Phys, D-33501 Bielefeld, Germany

来源：

JOURNAL OF APPLIED PHYSICS | 2008年 / 103卷 / 12期

关键词：

D O I：

10.1063/1.2939571

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The time-dependent dielectric breakdown has been investigated in Co-Fe-B/MgO/Co-Fe-B junctions by voltage ramp experiments and focused on its dependence on the barrier thickness, junction area, polarity of the applied voltage, ramp speed, and annealing temperature. The results suggest that the breakdown voltage strongly depends both on the polarity of the applied voltage and the annealing temperature. Magnetic tunnel junctions (MTJs) with positive bias on the top electrode show higher breakdown voltage than MTJs with negative bias. We found that there is a significant decrease in the breakdown voltage when the annealing temperature is increased above 350 degrees C. (C) 2008 American Institute of Physics.

引用

页数：5

共 15 条

[1] Emission of spin waves by a magnetic multilayer traversed by a current [J].

Berger, L .

PHYSICAL REVIEW B, 1996, 54 (13) :9353-9358

[2] Transmission electron microscopy study on the polycrystalline CoFeB/MgO/CoFeB based magnetic tunnel junction showing a high tunneling magnetoresistance, predicted in single crystal magnetic tunnel junction [J].

Choi, Y. S. ;

Tsunekawa, K. ;

Nagamine, Y. ;

Djayaprawira, D. .

JOURNAL OF APPLIED PHYSICS, 2007, 101 (01)

[3] Giant tunnel magnetoresistance and high annealing stability in CoFeB/MgO/CoFeB magnetic tunnel junctions with synthetic pinned layer [J].

Lee, Y. M. ;

Hayakawa, J. ;

Ikeda, S. ;

Matsukura, F. ;

Ohno, H. .

APPLIED PHYSICS LETTERS, 2006, 89 (04)

[4] Underlying physics of the thermochemical E model in describing low-field time-dependent dielectric breakdown in SiO2 thin films [J].

McPherson, JW ;

Mogul, HC .

JOURNAL OF APPLIED PHYSICS, 1998, 84 (03) :1513-1523

[5] Dielectric breakdown of ferromagnetic tunnel junctions [J].

Oepts, W ;

Verhagen, HJ ;

de Jonge, WJM ;

Coehoorn, R .

APPLIED PHYSICS LETTERS, 1998, 73 (16) :2363-2365

[6] Analysis of breakdown in ferromagnetic tunnel junctions [J].

Oepts, W ;

Verhagen, HJ ;

Coehoorn, R ;

de Jonge, WJM .

JOURNAL OF APPLIED PHYSICS, 1999, 86 (07) :3863-3872

[7] Two breakdown mechanisms in ultrathin alumina barrier magnetic tunnel junctions [J].

Oliver, B ;

Tuttle, G ;

He, Q ;

Tang, XF ;

Nowak, J .

JOURNAL OF APPLIED PHYSICS, 2004, 95 (03) :1315-1322

[8] Dielectric breakdown in magnetic tunnel junctions having an ultrathin barrier [J].

Oliver, B ;

He, Q ;

Tang, XF ;

Nowak, J .

JOURNAL OF APPLIED PHYSICS, 2002, 91 (07) :4348-4352

[9] Magnetotransport and microstructure of annealed magnetic tunnel junctions [J].

Schmalhorst, J ;

Brückl, H ;

Reiss, G ;

Gieres, G ;

Wecker, J .

JOURNAL OF APPLIED PHYSICS, 2002, 91 (10) :6617-6625

[10] Influence of chemical and magnetic interface properties of Co-Fe-B/MgO/Co-Fe-B tunnel junctions on the annealing temperature dependence of the magnetoresistance [J].

Schmalhorst, J. ;

Thomas, A. ;

Reiss, G. ;

Kou, X. ;

Arenholz, E. .

JOURNAL OF APPLIED PHYSICS, 2007, 102 (05)

← 1 2 →