Exciton dephasing in quantum dot molecules

被引：101
作者：
Borri, P
Langbein, W
Woggon, U
Schwab, M
Bayer, M
Fafard, S
Wasilewski, Z
Hawrylak, P
机构：
[1] Univ Dortmund, D-44227 Dortmund, Germany
[2] Natl Res Council Canada, Inst Microstruct Sci, Ottawa, ON K1A 0R6, Canada
来源：
PHYSICAL REVIEW LETTERS | 2003年 / 91卷 / 26期
关键词：
Cryostats - Damping - Excitons - Four wave mixing - Ground state - Heterodyning - Oscillations - Phonons - Photoluminescence - Quantum theory - Resonance - Semiconducting gallium arsenide - Semiconducting indium compounds;
D O I：
10.1103/PhysRevLett.91.267401
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
We have measured the exciton dephasing time in InAs/GaAs quantum dot molecules having different interdot barrier thicknesses in the temperature range from 5 to 60 K, using a highly sensitive four-wave mixing heterodyne technique. At 5 K dephasing times of several hundred picoseconds are found. Moreover, a systematic dependence of the dephasing dynamics on the barrier thickness is observed. These results show how the quantum-mechanical coupling of the electronic wave functions in the molecules affects both the exciton radiative lifetime and the exciton-acoustic phonon interaction.
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页码：267401 / 267401
页数：4
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