RF MEMS capacitive switch with leaky nanodiamond dielectric film

被引：14

作者：

Chen, Changwei ^{[1
]}

Tzeng, Yonhua ^{[1
]}

Kohn, Erhard ^{[2
]}

Wang, Chin-Hung ^{[3
]}

Mao, Jun-Kai ^{[3
]}

机构：

[1] Natl Cheng Kung Univ, Inst Microelect, Dept Elect Engn, Tainan 701, Taiwan

[2] Univ Ulm, Inst Electron Devices & Circuits, Ulm, Germany

[3] Ind Technol Res Inst S, Tainan 709, Taiwan

来源：

关键词：

Nanodiamond; RF MEMS switches; Dielectric charge trapping; MICROELECTROMECHANICAL-SYSTEM SWITCHES; MICROWAVE PLASMAS; NANOCRYSTALLINE; GROWTH; DESIGN; MICROCRYSTALLINE; VOLTAGE;

D O I：

10.1016/j.diamond.2011.02.008

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

RF MEMS capacitive switches using leaky nanodiamond as a dielectric film are studied and compared with those using Si3N4. Characteristics of dielectric charging and discharging are analyzed at temperature ranging from - 196 degrees C to 150 degrees C. Electrical resistivity of leaky nanodiamond is measured to be lower than that of Si3N4 by 3 to 6 orders of magnitude at room temperature. Trapped charges in leaky nanodiamond dielectric discharge much more quickly than those in Si3N4 while the power dissipation of nanodiamond based switches remains low. As a result, charge trapping induced shift in electrostatic actuation voltage is greatly reduced compared to that with Si3N4 and becomes non-detectable under the reported conditions. RF MEMS capacitive switches based on leaky nanodiamond dielectric are, therefore, more reliable than those with Si3N4. (C) 2011 Elsevier B.V. All rights reserved.

引用

页码：546 / 550

页数：5

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