The Multiscale Paradigm in Electronic Device Simulation

被引：82

作者：

der Maur, Matthias Auf ^{[1
]}

Penazzi, Gabriele ^{[1
]}

Romano, Giuseppe ^{[1
]}

Sacconi, Fabio ^{[1
]}

Pecchia, Alessandro ^{[1
,2
]}

Di Carlo, Aldo ^{[1
]}

机构：

[1] Univ Roma Tor Vergata, Dept Elect Engn, I-00133 Rome, Italy

[2] CNR ISMN Montelibretti, I-00015 Monterotondo, Italy

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2011年 / 58卷 / 05期

关键词：

Atomistic; device simulation; multiscale; quantum; technology computer-aided design (TCAD); LIGHT-EMITTING-DIODES; SEMICONDUCTOR-DEVICES; BRIDGING DOMAIN; LENGTH SCALES; WURTZITE; TRANSPORT; MODELS;

D O I：

10.1109/TED.2011.2114666

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, we present a framework for the simulation of electronic devices based on a multiscale and multiphysics approach. A formal description is provided that includes both multiscale and multiphysics problems and which can be linked to already established multiscale methods. We present a set of simulations of an AlGaN/GaN nanocolumn based on a multiscale coupling between atomistic descriptions and continuous media models, illustrating the application of such a multiscale approach to electronic device simulation.

引用

页码：1425 / 1432

页数：8

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