Growth and charge ordering of epitaxial YbFe2O4 films on sapphire using Fe3O4 buffer layer

被引：4
|
作者：
Fujii, Tatsuo [1 ]
Numata, Tomoya [1 ]
Nakahata, Hiroki [1 ]
Nakanishi, Makoto [1 ]
Kano, Jun [1 ]
Ikeda, Naoshi [2 ]
机构：
[1] Okayama Univ, Dept Appl Chem, Okayama 7008530, Japan
[2] Okayama Univ, Dept Phys, Okayama 7008530, Japan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS | 2018年 / 57卷 / 01期
关键词：
PULSED-LASER DEPOSITION; TEMPERATURE; LUFE2O4;
D O I：
10.7567/JJAP.57.010305
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Well-crystallized epitaxial YbFe2O4 films were prepared on an alpha-Al2O3(001) substrate using an Fe3O4 buffer layer. Fe3O4 has a relatively small lattice mismatch with both YbFe2O4 and alpha-Al2O3. Electron diffraction analysis combined with transmission electron microscopy revealed the epitaxial relationship to be alpha-Al2O3[110](001) parallel to Fe3O4[211](111) parallel to YbFe2O4[110](001). Moreover, superlattice spots due the Fe2+-Fe3+ charge order state of YbFe2O4 were clarified. The Fe2+/Fe3+ ratio in YbFe2O4 was nearly stoichiometric. The film exhibited a ferrimagnetic transition at similar to 220K and a nonlinear current-voltage characteristic at room temperature. These results confirmed the good crystallinity and stoichiometry of the obtained YbFe2O4 films. (C) 2018 The Japan Society of Applied Physics
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页数：3
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