Modification of the silicon surface by electroless deposition of platinum from HF solutions

被引：0

作者：

Gorostiza, P ^{[1
]}

Servat, J ^{[1
]}

Diaz, R ^{[1
]}

Sanz, F ^{[1
]}

Morante, JR ^{[1
]}

机构：

[1] UNIV BARCELONA,DEPT QUIM FIS,E-08028 BARCELONA,SPAIN

来源：

ELECTROCHEMICAL SYNTHESIS AND MODIFICATION OF MATERIALS | 1997年 / 451卷

关键词：

D O I：

暂无

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Platinum electroless deposition on Si(100) from HF solutions is hindered on n+ substrates as compared to p-substrates defining an induction period and displaying a more local behavior. The results are discussed in terms of a global electrochemical process. Platinum reduces injecting holes to the silicon valence band and silicon atoms oxidizes. The final morphological situation is a porous silicon layer which contains platinum nuclei formed by filling pits originated in the first stages of the deposition process.

引用

页码：275 / 280

页数：6

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