Exploring the short channel characteristics and performance analysis of DMDG SON MOSFET

被引：5

作者：

Banerjee, Pritha ^{[1
]}

Sarkar, Anup ^{[2
]}

Sarkar, Subir Kumar ^{[1
]}

机构：

[1] Jadavpur Univ, Dept Elect & Telecommun Engn, Kolkata 700032, India

[2] Womens Polytech, Kolkata, India

来源：

MICROELECTRONICS JOURNAL | 2017年 / 67卷

关键词：

Short channel effects (SCEs); Silicon-on-insulator (SOI)/silicon-on-nothing (SON) MOSFET; Dual-material double gate (DMDG); Drain-induced barrier lowering (DIBL); Subthreshold swing; Hot Carrier Effect (HCE); ANALYTICAL-MODEL;

D O I：

10.1016/j.mejo.2017.07.005

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A two-dimensional (2-D) analytical model for dual-material double gate (DMDG) Silicon-on-Nothing (SON) MOSFETs is developed to study the effect of variation of both the surface potential and threshold voltage on short channel effects (SCEs). Two dimensional (2-D) Poisson's equation with proper boundary conditions has been solved considering the parabolic potential approximation. The model includes the calculations of threshold voltage, electric field and subthreshold swing. The impact of variation of the device parameters such as gate length ratios, gate metal work functions on the performance of the device has been examined and the results are compared to that of dual-material double gate (DMDG) Silicon-on-Insulator (SOI) MOSFETs. The calculated results obtained have been validated with the numerical simulation data obtained from ATLAS, a 2-D device simulator from SILVACO.

引用

页码：50 / 56

页数：7

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