Modeling electronic and optical properties of III-V quantum dots-selected recent developments

被引：31

作者：

Mittelstaedt, Alexander ^{[1
]}

Schliwa, Andrei ^{[1
]}

Klenovsky, Petr ^{[2
,3
]}

机构：

[1] Tech Univ Berlin, Inst Solid State Phys, Hardenbergstr 36, D-10623 Berlin, Germany

[2] Masaryk Univ, Fac Sci, Dept Condensed Matter Phys, Kotlarska 267-2, Brno 61137, Czech Republic

[3] Czech Metrol Inst, Okruzni 31, Brno 63800, Czech Republic

来源：

LIGHT-SCIENCE & APPLICATIONS | 2022年 / 11卷 / 01期

基金：

欧盟地平线“2020”;

关键词：

STRAIN DISTRIBUTION; RECENT PROGRESS; SEMICONDUCTORS; LASERS; POTENTIALS; THRESHOLD; TRANSPORT; NEXTNANO; WELL;

D O I：

10.1038/s41377-021-00700-9

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Electronic properties of selected quantum dot (QD) systems are surveyed based on the multi-band k center dot p method, which we benchmark by direct comparison to the empirical tight-binding algorithm, and we also discuss the newly developed "linear combination of quantum dot orbitals" method. Furthermore, we focus on two major complexes: First, the role of antimony incorporation in InGaAs/GaAs submonolayer QDs and In1-xGax AsySb1-y/GaP QDs, and second, the theory of QD-based quantum cascade lasers and the related prospect of room temperature lasing.

引用

页数：14

共 40 条

[31] Structural, mechanical, and electronic properties of 25 kinds of III-V binary monolayers: A computational study with first-principles calculation
Liu, Xue-Fei
Luo, Zi-Jiang
Zhou, Xun
Wei, Jie-Min
Wang, Yi
Guo, Xiang
Lv, Bing
Ding, Zhao
CHINESE PHYSICS B, 2019, 28 (08)
[32] Orientation dependence of electronic structure and optical gain of (11N)-oriented III-V-N quantum wells
Fan, W. J.
JOURNAL OF APPLIED PHYSICS, 2013, 113 (08)
[33] Influence of Band Non-Parabolicity on Few Ballistic Properties of III-V Quantum Wire Field Effect Transistors Under Strong Inversion
Bhattacharya, Sitangshu
Mahapatra, Santanu
JOURNAL OF COMPUTATIONAL AND THEORETICAL NANOSCIENCE, 2009, 6 (07) : 1605 - 1616
[34] Electronic and optical properties of GaN/AlN quantum dots on Si(111) subject to in-plane uniaxial stresses and variable excitation
Moshe, O.
Rich, D. H.
Birner, S.
Povolotskyi, M.
Damilano, B.
Massies, J.
JOURNAL OF APPLIED PHYSICS, 2010, 108 (08)
[35] Impact of second-order piezoelectricity on electronic and optical properties of c-plane InxGa1-xN quantum dots: Consequences for long wavelength emitters
Patra, Saroj Kanta
Schulz, Stefan
APPLIED PHYSICS LETTERS, 2017, 111 (10)
[36] Type-II InAsxSb1-x/InAs quantum dots for midinfrared applications: Effect of morphology and composition on electronic and optical properties
Yeap, G. H.
Rybchenko, S. I.
Itskevich, I. E.
Haywood, S. K.
PHYSICAL REVIEW B, 2009, 79 (07):
[37] Electronic, optical and magnetic properties of Co, Fe and Ni doped (ZnX)6; (X = O, S & Se) quantum dots - A DFT study
Gopalakrishnan, Sankarasubramanian
Kolandaivel, Ponmalai
COMPUTATIONAL AND THEORETICAL CHEMISTRY, 2017, 1111 : 56 - 68
[38] Band structure and absorption properties of (Ga, In)/(P, As, N) symmetric and asymmetric quantum wells and super-lattice structures: Towards lattice-matched III-V/Si tandem
Kharel, K.
Freundlich, A.
JOURNAL OF APPLIED PHYSICS, 2018, 124 (09)
[39] Group III (In/Ga)-V (P/As)-VI (S/Se) Monolayers: A New Class of Auxetic Semiconductors with Highly Anisotropic Electronic/Optical/Mechanical/Thermal Properties
Li, Pengfei
Li, Daqing
Xu, Yuehua
Liang, Changhao
Zeng, Xiao Cheng
JOURNAL OF PHYSICAL CHEMISTRY LETTERS, 2024, 15 (11): : 3043 - 3054
[40] Optical and Electronic Properties of Symmetric InAs/(In,Al, Ga)As/InP Quantum Dots Formed by Ripening in Molecular Beam Epitaxy: A Potential System for Broad-Range Single-Photon Telecom Emitters
Holewa, P.
Gawelczyk, M.
Marynski, A.
Wyborski, P.
Reithmaier, J. P.
Sek, G.
Benyoucef, M.
Syperek, M.
PHYSICAL REVIEW APPLIED, 2020, 14 (06)

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