Modeling electronic and optical properties of III-V quantum dots-selected recent developments

被引：31

作者：

Mittelstaedt, Alexander ^{[1
]}

Schliwa, Andrei ^{[1
]}

Klenovsky, Petr ^{[2
,3
]}

机构：

[1] Tech Univ Berlin, Inst Solid State Phys, Hardenbergstr 36, D-10623 Berlin, Germany

[2] Masaryk Univ, Fac Sci, Dept Condensed Matter Phys, Kotlarska 267-2, Brno 61137, Czech Republic

[3] Czech Metrol Inst, Okruzni 31, Brno 63800, Czech Republic

来源：

LIGHT-SCIENCE & APPLICATIONS | 2022年 / 11卷 / 01期

基金：

欧盟地平线“2020”;

关键词：

STRAIN DISTRIBUTION; RECENT PROGRESS; SEMICONDUCTORS; LASERS; POTENTIALS; THRESHOLD; TRANSPORT; NEXTNANO; WELL;

D O I：

10.1038/s41377-021-00700-9

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Electronic properties of selected quantum dot (QD) systems are surveyed based on the multi-band k center dot p method, which we benchmark by direct comparison to the empirical tight-binding algorithm, and we also discuss the newly developed "linear combination of quantum dot orbitals" method. Furthermore, we focus on two major complexes: First, the role of antimony incorporation in InGaAs/GaAs submonolayer QDs and In1-xGax AsySb1-y/GaP QDs, and second, the theory of QD-based quantum cascade lasers and the related prospect of room temperature lasing.

引用

页数：14

共 40 条

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