Mechanisms for photoluminescence from nanoscale shicon/silicon oxide systems

被引:0
|
作者
Qin, GG [1 ]
机构
[1] Peking Univ, Sch Phys, State Key Lab Mesoscop, Beijing 100871, Peoples R China
关键词
nanoscale silicon particles/oxidized silicon system; luminescence; photoluminescence mechanism;
D O I
暂无
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
Most porous silicon samples studied have been oxidized in various degrees. Oxidized porous silicon and the nanoscale silicon particles embedded oxidized silicon have similar structures and luminescence characteristics. Both of them consist of a great quantity of nanoscale silicon particles, each of which is surrounded by an oxidized silicon layer, and can be named as nanoscale silicon/oxidized silicon systems. They are the most strongly studied and very promising silicon-based luminescence materials. In this article, the photoluminescence mechanisms of the nanoscale silicon particles/oxidized silicon systems were summarized and discussed. The related research works finished by our group in Peking university were briefly introduced.
引用
收藏
页码:165 / 173
页数:9
相关论文
共 41 条
  • [1] Bai GF, 1998, PHYS LOW-DIMENS STR, V1-2, P127
  • [2] Electroluminescence from Au native silicon oxide layer p+-Si and Au native silicon oxide layer n+-Si structures under reverse biases
    Bai, GF
    Wang, YQ
    Ma, ZC
    Zong, WH
    Qin, GG
    [J]. JOURNAL OF PHYSICS-CONDENSED MATTER, 1998, 10 (44) : L717 - L721
  • [3] Growing carbon nanotubes by microwave plasma-enhanced chemical vapor deposition
    Qin, LC
    Zhou, D
    Krauss, AR
    Gruen, DM
    [J]. APPLIED PHYSICS LETTERS, 1998, 72 (26) : 3437 - 3439
  • [4] Demonstration of a silicon Raman laser
    Boyraz, O
    Jalali, B
    [J]. OPTICS EXPRESS, 2004, 12 (21): : 5269 - 5273
  • [5] SILICON QUANTUM WIRE ARRAY FABRICATION BY ELECTROCHEMICAL AND CHEMICAL DISSOLUTION OF WAFERS
    CANHAM, LT
    [J]. APPLIED PHYSICS LETTERS, 1990, 57 (10) : 1046 - 1048
  • [6] CANHAM LT, 1997, PROPERTIES POROUS SI, P247
  • [7] Light emitting mechanism of porous silicon
    Chang, IM
    Chen, YF
    [J]. JOURNAL OF APPLIED PHYSICS, 1997, 82 (07) : 3514 - 3518
  • [8] Room-temperature 1.54-μm electroluminescence from the Au/nanometer (SiO2:Er/Si/SiO2:Er)/n+-Si structure
    Chen, Y
    Ran, GZ
    Dai, L
    Zhang, BR
    Qin, GG
    Ma, ZC
    Zong, WH
    [J]. APPLIED PHYSICS LETTERS, 2002, 80 (14) : 2496 - 2498
  • [9] The structural and luminescence properties of porous silicon
    Cullis, AG
    Canham, LT
    Calcott, PDJ
    [J]. JOURNAL OF APPLIED PHYSICS, 1997, 82 (03) : 909 - 965
  • [10] CULLIS AG, 1994, J APPL PHYS, V75, P501