Growth of the metastable zinc-blende MnTe films on highly dissimilar perovskite SrTiO3 (001) substrates by molecular beam epitaxy

被引：5

作者：

Zhu, Xuanting ^{[1
]}

Song, Kun ^{[1
]}

Tang, Kai ^{[1
]}

Bai, Wei ^{[1
]}

Bai, Jiawei ^{[1
]}

Zhu, Liangqing ^{[1
]}

Yang, Jing ^{[1
]}

Zhang, Yuanyuan ^{[1
]}

Qi, Ruijuan ^{[1
]}

Huang, Rong ^{[1
]}

Tang, Xiaodong ^{[1
]}

Chu, Junhao ^{[1
]}

机构：

[1] East China Normal Univ, Minist Educ, Dept Elect Engn, Key Lab Polar Mat & Devices, Shanghai 200241, Peoples R China

来源：

JOURNAL OF ALLOYS AND COMPOUNDS | 2017年 / 729卷

关键词：

Zinc-blende MnTe films; Molecular beam epitaxy; Perovskite SrTiO3 (001) substrates; Compliant epitaxial mechanism; THIN-FILMS; SEMICONDUCTORS; SILICON; MBE;

D O I：

10.1016/j.jallcom.2017.09.134

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The systematic growth dependent on the growth temperature and telluride and manganese flux ratio of MnTe films on perovskite SrTiO3 (001) is addressed in this article. Metastable zinc-blende (ZB) MnTe single crystal films with high-crystalline quality and atomically flat surfaces are epitaxially deposited abiding by a two-dimensional growth regime. Epitaxial relationships are summarized as: (111)(ZB-MnTe) parallel to (002)(STO) and [110](ZB-MnTe) parallel to [010](STO), or equivalent directions. Finally, compliant epitaxial mechanism, i.e. the formation of an ultrathin compliment substrate revealed by the evolution of inter-atomic distances deduced from electron diffraction, X-ray diffraction and electron microscopy, is proposed to account for the growth of the ZB-MnTe films on SrTiO3(001). (C) 2017 Elsevier B.V. All rights reserved.

引用

页码：95 / 99

页数：5

共 27 条

[1] CONTROL OF THE CRYSTAL ORIENTATION OF ZINCBLENDE MNTE EPITAXIAL-FILMS GROWN ON GAAS [J].