Growth of the metastable zinc-blende MnTe films on highly dissimilar perovskite SrTiO3 (001) substrates by molecular beam epitaxy

被引：5
作者：
Zhu, Xuanting [1 ]
Song, Kun [1 ]
Tang, Kai [1 ]
Bai, Wei [1 ]
Bai, Jiawei [1 ]
Zhu, Liangqing [1 ]
Yang, Jing [1 ]
Zhang, Yuanyuan [1 ]
Qi, Ruijuan [1 ]
Huang, Rong [1 ]
Tang, Xiaodong [1 ]
Chu, Junhao [1 ]
机构：
[1] East China Normal Univ, Minist Educ, Dept Elect Engn, Key Lab Polar Mat & Devices, Shanghai 200241, Peoples R China
来源：
JOURNAL OF ALLOYS AND COMPOUNDS | 2017年 / 729卷
关键词：
Zinc-blende MnTe films; Molecular beam epitaxy; Perovskite SrTiO3 (001) substrates; Compliant epitaxial mechanism; THIN-FILMS; SEMICONDUCTORS; SILICON; MBE;
D O I：
10.1016/j.jallcom.2017.09.134
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
The systematic growth dependent on the growth temperature and telluride and manganese flux ratio of MnTe films on perovskite SrTiO3 (001) is addressed in this article. Metastable zinc-blende (ZB) MnTe single crystal films with high-crystalline quality and atomically flat surfaces are epitaxially deposited abiding by a two-dimensional growth regime. Epitaxial relationships are summarized as: (111)(ZB-MnTe) parallel to (002)(STO) and [110](ZB-MnTe) parallel to [010](STO), or equivalent directions. Finally, compliant epitaxial mechanism, i.e. the formation of an ultrathin compliment substrate revealed by the evolution of inter-atomic distances deduced from electron diffraction, X-ray diffraction and electron microscopy, is proposed to account for the growth of the ZB-MnTe films on SrTiO3(001). (C) 2017 Elsevier B.V. All rights reserved.
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收藏
页码：95 / 99
页数：5
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