A Novel p-n-Diode Structure of SONOS-Type TFT NVM With Embedded Silicon Nanocrystals

被引：7

作者：

Chiang, Tsung-Yu ^{[1
]}

Ma, William Cheng-Yu ^{[2
]}

Wu, Yi-Hong ^{[1
]}

Wang, Kuan-Ti ^{[1
]}

Chao, Tien-Sheng ^{[1
]}

机构：

[1] Natl Chiao Tung Univ, Dept Electrophys, Hsinchu 30010, Taiwan

[2] Natl Chiao Tung Univ, Inst Elect, Hsinchu 300, Taiwan

来源：

IEEE ELECTRON DEVICE LETTERS | 2010年 / 31卷 / 11期

关键词：

Band-to-band tunneling (BTBT); nonvolatile memory (NVM); p-n diode (PND); silicon nanocrystal (Si-NC); thin-film transistor (TFT); FLASH MEMORY;

D O I：

10.1109/LED.2010.2064153

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this letter, for the first time, a novel p-n-diode (PND) structure of SONOS-type thin-film transistor (TFT) nonvolatile memory (NVM) with embedded silicon nanocrystals (Si-NCs) in the silicon nitride layer using an in situ method is successfully demonstrated. This novel structure has many advantages, including high density and suitability for 3-D circuit integration. Hot-electron injection and hot-hole injection are used as the program and erase methods, respectively. The sensing current of the three-terminal PND-TFT NVM is 10(-7) A by the band-to-band tunneling current. A much larger memory window (> 12 V) and good data retention time (> 10(8) s for 12% charge loss) are exhibited. The device appears to have great potential for system-on-panel applications.

引用

页码：1239 / 1241

页数：3

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