Laser removal of foreign materials from semiconductor wafers

被引：2

作者：

Genut, M ^{[1
]}

Livshits, B ^{[1
]}

Uziel, Y ^{[1
]}

Tehar-Zahav, O ^{[1
]}

Iskevitch, E ^{[1
]}

Barzilay, I ^{[1
]}

Speiser, S ^{[1
]}

机构：

[1] Oramir Semicond Equipment Ltd, IL-31000 Haifa, Israel

来源：

LASER APPLICATIONS IN MICROELECTRONIC AND OPTOELECTRONIC MANUFACTURING III | 1998年 / 3274卷

关键词：

laser cleaning; laser photoresist stripping; dry cleaning; laser induced chemical etching; laser sidewall removal;

D O I：

10.1117/12.309497

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Removal of foreign materials formed during VLSI/ULSI processing, is one of the challenges of advanced semiconductor technology. As device geometries continue to shrink, microcontaminants such as particles, metallic contaminants, photoresists and other organic residues have an increasing impact on yield. As wafer processing becomes more aggressive and contaminants which are yield limiting become much smaller, traditional cleaning techniques based on wet-chemistry cleaning become less adequate. Only a completely dry cleaning process can overcome all the drawbacks associated with the problematic wet chemistry cleaning. A novel DUV-Excimer laser Dry removal method allows the elimination of these contaminants, in a single step process.

引用

页码：90 / 99

页数：2