Rapid thermal annealing of reactive sputtered tantalum oxide films on GaAs in N2O atmosphere

被引：0

作者：

Eftekhari, G ^{[1
]}

机构：

[1] SUNY Coll New Paltz, Dept Elect Engn, New Paltz, NY 12561 USA

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1998年 / 16卷 / 04期

关键词：

D O I：

10.1116/1.581410

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The electrical properties of composite oxide (anodized oxide and tantalum oxide deposited by reactive sputtering) on GaAs annealed in N2O were studied. The leakage current was decreased and at moderate electric field strengths it is governed by Schottky emission. The breakdown electric field of the samples and the dielectric constant of tantalum oxide were increased after annealing. (C) 1998 American Vacuum Society. [S0734-2101(98)03404-6].

引用

页码：2735 / 2737

页数：3

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