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- [21] Utilizing NDR effect to reduce switching threshold variations in memristive devicesAPPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2013, 111 (01): : 199 - 202Alibart, Fabien论文数: 0 引用数: 0 h-index: 0机构: Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USAStrukov, Dmitri B.论文数: 0 引用数: 0 h-index: 0机构: Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA
- [22] Memristive devices based on mass printed organic resistive switching layersAPPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2021, 127 (09):Strutwolf, Jorg论文数: 0 引用数: 0 h-index: 0机构: Tech Univ Chemnitz, Inst Print & Media Technol, D-09107 Chemnitz, Germany Tech Univ Chemnitz, Inst Print & Media Technol, D-09107 Chemnitz, GermanyChen, Yong论文数: 0 引用数: 0 h-index: 0机构: Tech Univ Chemnitz, Inst Print & Media Technol, D-09107 Chemnitz, Germany Tech Univ Chemnitz, Inst Print & Media Technol, D-09107 Chemnitz, GermanyUllrich, Johann论文数: 0 引用数: 0 h-index: 0机构: Tech Univ Chemnitz, Inst Print & Media Technol, D-09107 Chemnitz, Germany Tech Univ Chemnitz, Inst Print & Media Technol, D-09107 Chemnitz, GermanyDehnert, Martin论文数: 0 引用数: 0 h-index: 0机构: Tech Univ Chemnitz, Inst Phys, D-09107 Chemnitz, Germany Tech Univ Chemnitz, Inst Print & Media Technol, D-09107 Chemnitz, GermanyHuebler, Arved C.论文数: 0 引用数: 0 h-index: 0机构: Tech Univ Chemnitz, Inst Print & Media Technol, D-09107 Chemnitz, Germany Tech Univ Chemnitz, Inst Print & Media Technol, D-09107 Chemnitz, Germany
- [23] Memristive devices based on mass printed organic resistive switching layersApplied Physics A, 2021, 127Jörg Strutwolf论文数: 0 引用数: 0 h-index: 0机构: Chemnitz University of Technology,Institute for Print and Media TechnologyYong Chen论文数: 0 引用数: 0 h-index: 0机构: Chemnitz University of Technology,Institute for Print and Media TechnologyJohann Ullrich论文数: 0 引用数: 0 h-index: 0机构: Chemnitz University of Technology,Institute for Print and Media TechnologyMartin Dehnert论文数: 0 引用数: 0 h-index: 0机构: Chemnitz University of Technology,Institute for Print and Media TechnologyArved C. Hübler论文数: 0 引用数: 0 h-index: 0机构: Chemnitz University of Technology,Institute for Print and Media Technology
- [24] Memristive switching in the surface of a charge-density-wave topological semimetalSCIENCE BULLETIN, 2024, 69 (13) : 2042 - 2049Ma, Jianwen论文数: 0 引用数: 0 h-index: 0机构: Fudan Univ, State Key Lab Surface Phys, Shanghai 200433, Peoples R China Fudan Univ, Inst Nanoelect Devices & Quantum Comp, Shanghai 200433, Peoples R China Fudan Univ, State Key Lab Surface Phys, Shanghai 200433, Peoples R ChinaMeng, Xianghao论文数: 0 引用数: 0 h-index: 0机构: East China Normal Univ, State Key Lab Precis Spect, Shanghai 200241, Peoples R China Fudan Univ, State Key Lab Surface Phys, Shanghai 200433, Peoples R ChinaZhang, Binhua论文数: 0 引用数: 0 h-index: 0机构: Fudan Univ, Inst Computat Phys Sci, Dept Phys, Key Lab Computat Phys Sci,State Key Lab Surface Ph, Shanghai 200433, Peoples R China Shanghai Qi Zhi Inst, Shanghai 200030, Peoples R China Fudan Univ, State Key Lab Surface Phys, Shanghai 200433, Peoples R ChinaWang, Yuxiang论文数: 0 引用数: 0 h-index: 0机构: Fudan Univ, State Key Lab Surface Phys, Shanghai 200433, Peoples R China Fudan Univ, Inst Nanoelect Devices & Quantum Comp, Shanghai 200433, Peoples R China Fudan Univ, State Key Lab Surface Phys, Shanghai 200433, Peoples R ChinaMou, Yicheng论文数: 0 引用数: 0 h-index: 0机构: Fudan Univ, State Key Lab Surface Phys, Shanghai 200433, Peoples R China Fudan Univ, Inst Nanoelect Devices & Quantum Comp, Shanghai 200433, Peoples R China Fudan Univ, State Key Lab Surface Phys, Shanghai 200433, Peoples R ChinaLin, Wenting论文数: 0 引用数: 0 h-index: 0机构: Southeast Univ, Sch Phys, Nanjing 211189, Peoples R China Fudan Univ, State Key Lab Surface Phys, Shanghai 200433, Peoples R ChinaDai, Yannan论文数: 0 引用数: 0 h-index: 0机构: East China Normal Univ, Dept Elect, Key Lab Polar Mat & Devices, Minist Educ, Shanghai 200241, Peoples R China East China Normal Univ, Shanghai Ctr Brain inspired Intelligent Mat & Devi, Shanghai 200241, Peoples R China Fudan Univ, State Key Lab Surface Phys, Shanghai 200433, Peoples R ChinaChen, Luqiu论文数: 0 引用数: 0 h-index: 0机构: East China Normal Univ, Dept Elect, Key Lab Polar Mat & Devices, Minist Educ, Shanghai 200241, Peoples R China East China Normal Univ, Shanghai Ctr Brain inspired Intelligent Mat & Devi, Shanghai 200241, Peoples R China Fudan Univ, State Key Lab Surface Phys, Shanghai 200433, Peoples R ChinaWang, Haonan论文数: 0 引用数: 0 h-index: 0机构: East China Normal Univ, Dept Elect, Key Lab Polar Mat & Devices, Minist Educ, Shanghai 200241, Peoples R China Fudan Univ, State Key Lab Surface Phys, Shanghai 200433, Peoples R ChinaWu, Haoqi论文数: 0 引用数: 0 h-index: 0机构: Fudan Univ, Sch Microelect, State Key Lab ASIC & Syst, Shanghai 200433, Peoples R China Fudan Univ, State Key Lab Surface Phys, Shanghai 200433, Peoples R ChinaGu, Jiaming论文数: 0 引用数: 0 h-index: 0机构: Fudan Univ, State Key Lab Surface Phys, Shanghai 200433, Peoples R China Fudan Univ, Inst Nanoelect Devices & Quantum Comp, Shanghai 200433, Peoples R China Fudan Univ, State Key Lab Surface Phys, Shanghai 200433, Peoples R ChinaWang, Jiayu论文数: 0 引用数: 0 h-index: 0机构: Fudan Univ, State Key Lab Surface Phys, Shanghai 200433, Peoples R China Fudan Univ, Inst Nanoelect Devices & Quantum Comp, Shanghai 200433, Peoples R China Fudan Univ, State Key Lab Surface Phys, Shanghai 200433, Peoples R ChinaDu, Yuhan论文数: 0 引用数: 0 h-index: 0机构: East China Normal Univ, State Key Lab Precis Spect, Shanghai 200241, Peoples R China Fudan Univ, State Key Lab Surface Phys, Shanghai 200433, Peoples R ChinaLiu, Chunsen论文数: 0 引用数: 0 h-index: 0机构: Fudan Univ, Frontier Inst Chip & Syst, Shanghai 200433, Peoples R China Fudan Univ, State Key Lab Surface Phys, Shanghai 200433, Peoples R ChinaShi, Wu论文数: 0 引用数: 0 h-index: 0机构: Fudan Univ, State Key Lab Surface Phys, Shanghai 200433, Peoples R China Fudan Univ, Inst Nanoelect Devices & Quantum Comp, Shanghai 200433, Peoples R China Fudan Univ, Zhangjiang Fudan Int Innovat Ctr, Shanghai 201210, Peoples R China Fudan Univ, State Key Lab Surface Phys, Shanghai 200433, Peoples R ChinaYang, Zhenzhong论文数: 0 引用数: 0 h-index: 0机构: East China Normal Univ, Dept Elect, Key Lab Polar Mat & Devices, Minist Educ, Shanghai 200241, Peoples R China Fudan Univ, State Key Lab Surface Phys, Shanghai 200433, Peoples R ChinaTian, Bobo论文数: 0 引用数: 0 h-index: 0机构: East China Normal Univ, Dept Elect, Key Lab Polar Mat & Devices, Minist Educ, Shanghai 200241, Peoples R China East China Normal Univ, Shanghai Ctr Brain inspired Intelligent Mat & Devi, Shanghai 200241, Peoples R China Fudan Univ, State Key Lab Surface Phys, Shanghai 200433, Peoples R ChinaMiao, Lin论文数: 0 引用数: 0 h-index: 0机构: Southeast Univ, Sch Phys, Nanjing 211189, Peoples R China Fudan Univ, State Key Lab Surface Phys, Shanghai 200433, Peoples R ChinaZhou, Peng论文数: 0 引用数: 0 h-index: 0机构: Fudan Univ, Sch Microelect, State Key Lab ASIC & Syst, Shanghai 200433, Peoples R China Fudan Univ, Frontier Inst Chip & Syst, Shanghai 200433, Peoples R China Fudan Univ, State Key Lab Surface Phys, Shanghai 200433, Peoples R ChinaDuan, Chun-Gang论文数: 0 引用数: 0 h-index: 0机构: East China Normal Univ, Dept Elect, Key Lab Polar Mat & Devices, Minist Educ, Shanghai 200241, Peoples R China East China Normal Univ, Shanghai Ctr Brain inspired Intelligent Mat & Devi, Shanghai 200241, Peoples R China Fudan Univ, State Key Lab Surface Phys, Shanghai 200433, Peoples R ChinaXu, Changsong论文数: 0 引用数: 0 h-index: 0机构: Fudan Univ, Inst Computat Phys Sci, Dept Phys, Key Lab Computat Phys Sci,State Key Lab Surface Ph, Shanghai 200433, Peoples R China Shanghai Qi Zhi Inst, Shanghai 200030, Peoples R China Fudan Univ, State Key Lab Surface Phys, Shanghai 200433, Peoples R ChinaYuan, Xiang论文数: 0 引用数: 0 h-index: 0机构: East China Normal Univ, State Key Lab Precis Spect, Shanghai 200241, Peoples R China East China Normal Univ, Shanghai Ctr Brain inspired Intelligent Mat & Devi, Shanghai 200241, Peoples R China East China Normal Univ, Sch Phys & Elect Sci, Shanghai 200241, Peoples R China Fudan Univ, State Key Lab Surface Phys, Shanghai 200433, Peoples R ChinaZhang, Cheng论文数: 0 引用数: 0 h-index: 0机构: Fudan Univ, State Key Lab Surface Phys, Shanghai 200433, Peoples R China Fudan Univ, Inst Nanoelect Devices & Quantum Comp, Shanghai 200433, Peoples R China Fudan Univ, Zhangjiang Fudan Int Innovat Ctr, Shanghai 201210, Peoples R China Fudan Univ, State Key Lab Surface Phys, Shanghai 200433, Peoples R China
- [25] Multilayer Metal-Oxide Memristive Device with Stabilized Resistive SwitchingADVANCED MATERIALS TECHNOLOGIES, 2020, 5 (01)Mikhaylov, Alexey论文数: 0 引用数: 0 h-index: 0机构: Lobachevsky Univ, 23-3 Gagarin Prospect, Nizhnii Novgorod 603950, Russia Lobachevsky Univ, 23-3 Gagarin Prospect, Nizhnii Novgorod 603950, RussiaBelov, Alexey论文数: 0 引用数: 0 h-index: 0机构: Lobachevsky Univ, 23-3 Gagarin Prospect, Nizhnii Novgorod 603950, Russia Lobachevsky Univ, 23-3 Gagarin Prospect, Nizhnii Novgorod 603950, RussiaKorolev, Dmitry论文数: 0 引用数: 0 h-index: 0机构: Lobachevsky Univ, 23-3 Gagarin Prospect, Nizhnii Novgorod 603950, Russia Lobachevsky Univ, 23-3 Gagarin Prospect, Nizhnii Novgorod 603950, RussiaAntonov, Ivan论文数: 0 引用数: 0 h-index: 0机构: Lobachevsky Univ, 23-3 Gagarin Prospect, Nizhnii Novgorod 603950, Russia Lobachevsky Univ, 23-3 Gagarin Prospect, Nizhnii Novgorod 603950, RussiaKotomina, Valentina论文数: 0 引用数: 0 h-index: 0机构: Lobachevsky Univ, 23-3 Gagarin Prospect, Nizhnii Novgorod 603950, Russia Lobachevsky Univ, 23-3 Gagarin Prospect, Nizhnii Novgorod 603950, RussiaKotina, Alina论文数: 0 引用数: 0 h-index: 0机构: Lobachevsky Univ, 23-3 Gagarin Prospect, Nizhnii Novgorod 603950, Russia Lobachevsky Univ, 23-3 Gagarin Prospect, Nizhnii Novgorod 603950, RussiaGryaznov, Evgeny论文数: 0 引用数: 0 h-index: 0机构: Lobachevsky Univ, 23-3 Gagarin Prospect, Nizhnii Novgorod 603950, Russia Lobachevsky Univ, 23-3 Gagarin Prospect, Nizhnii Novgorod 603950, RussiaSharapov, Alexander论文数: 0 引用数: 0 h-index: 0机构: Lobachevsky Univ, 23-3 Gagarin Prospect, Nizhnii Novgorod 603950, Russia Lobachevsky Univ, 23-3 Gagarin Prospect, Nizhnii Novgorod 603950, RussiaKoryazhkina, Maria论文数: 0 引用数: 0 h-index: 0机构: Lobachevsky Univ, 23-3 Gagarin Prospect, Nizhnii Novgorod 603950, Russia Lobachevsky Univ, 23-3 Gagarin Prospect, Nizhnii Novgorod 603950, RussiaKryukov, Ruslan论文数: 0 引用数: 0 h-index: 0机构: Lobachevsky Univ, 23-3 Gagarin Prospect, Nizhnii Novgorod 603950, Russia Lobachevsky Univ, 23-3 Gagarin Prospect, Nizhnii Novgorod 603950, RussiaZubkov, Sergey论文数: 0 引用数: 0 h-index: 0机构: Lobachevsky Univ, 23-3 Gagarin Prospect, Nizhnii Novgorod 603950, Russia Lobachevsky Univ, 23-3 Gagarin Prospect, Nizhnii Novgorod 603950, RussiaSushkov, Artem论文数: 0 引用数: 0 h-index: 0机构: Lobachevsky Univ, 23-3 Gagarin Prospect, Nizhnii Novgorod 603950, Russia Lobachevsky Univ, 23-3 Gagarin Prospect, Nizhnii Novgorod 603950, RussiaPavlov, Dmitry论文数: 0 引用数: 0 h-index: 0机构: Lobachevsky Univ, 23-3 Gagarin Prospect, Nizhnii Novgorod 603950, Russia Lobachevsky Univ, 23-3 Gagarin Prospect, Nizhnii Novgorod 603950, RussiaTikhov, Stanislav论文数: 0 引用数: 0 h-index: 0机构: Lobachevsky Univ, 23-3 Gagarin Prospect, Nizhnii Novgorod 603950, Russia Lobachevsky Univ, 23-3 Gagarin Prospect, Nizhnii Novgorod 603950, RussiaMorozov, Oleg论文数: 0 引用数: 0 h-index: 0机构: Lobachevsky Univ, 23-3 Gagarin Prospect, Nizhnii Novgorod 603950, Russia Lobachevsky Univ, 23-3 Gagarin Prospect, Nizhnii Novgorod 603950, RussiaTetelbaum, David论文数: 0 引用数: 0 h-index: 0机构: Lobachevsky Univ, 23-3 Gagarin Prospect, Nizhnii Novgorod 603950, Russia Lobachevsky Univ, 23-3 Gagarin Prospect, Nizhnii Novgorod 603950, Russia
- [26] Forming compliance dominated memristive switching through interfacial reaction in Ti/TiO2/Au structureJOURNAL OF APPLIED PHYSICS, 2015, 118 (18)Tang, Zhensen论文数: 0 引用数: 0 h-index: 0机构: Natl Univ Def Technol, State Key Lab High Performance Comp, Changsha 410073, Hunan, Peoples R China Natl Univ Def Technol, Coll Comp, Changsha 410073, Hunan, Peoples R China Natl Univ Def Technol, State Key Lab High Performance Comp, Changsha 410073, Hunan, Peoples R ChinaFang, Liang论文数: 0 引用数: 0 h-index: 0机构: Natl Univ Def Technol, State Key Lab High Performance Comp, Changsha 410073, Hunan, Peoples R China Natl Univ Def Technol, Coll Comp, Changsha 410073, Hunan, Peoples R China Natl Univ Def Technol, State Key Lab High Performance Comp, Changsha 410073, Hunan, Peoples R ChinaXu, Nuo论文数: 0 引用数: 0 h-index: 0机构: Natl Univ Def Technol, State Key Lab High Performance Comp, Changsha 410073, Hunan, Peoples R China Natl Univ Def Technol, Coll Comp, Changsha 410073, Hunan, Peoples R China Natl Univ Def Technol, State Key Lab High Performance Comp, Changsha 410073, Hunan, Peoples R ChinaLiu, Rulin论文数: 0 引用数: 0 h-index: 0机构: Natl Univ Def Technol, State Key Lab High Performance Comp, Changsha 410073, Hunan, Peoples R China Natl Univ Def Technol, Coll Comp, Changsha 410073, Hunan, Peoples R China Natl Univ Def Technol, State Key Lab High Performance Comp, Changsha 410073, Hunan, Peoples R China
- [27] Power signatures of electric field and thermal switching regimes in memristive SET transitionsJOURNAL OF PHYSICS D-APPLIED PHYSICS, 2016, 49 (24)Mickel, Patrick R.论文数: 0 引用数: 0 h-index: 0机构: Sandia Natl Labs, POB 5800, Albuquerque, NM 87185 USA Sandia Natl Labs, POB 5800, Albuquerque, NM 87185 USAHughart, David论文数: 0 引用数: 0 h-index: 0机构: Sandia Natl Labs, POB 5800, Albuquerque, NM 87185 USA Sandia Natl Labs, POB 5800, Albuquerque, NM 87185 USALohn, Andrew J.论文数: 0 引用数: 0 h-index: 0机构: Sandia Natl Labs, POB 5800, Albuquerque, NM 87185 USA Sandia Natl Labs, POB 5800, Albuquerque, NM 87185 USAGao, Xujiao论文数: 0 引用数: 0 h-index: 0机构: Sandia Natl Labs, POB 5800, Albuquerque, NM 87185 USA Sandia Natl Labs, POB 5800, Albuquerque, NM 87185 USAMamaluy, Denis论文数: 0 引用数: 0 h-index: 0机构: Sandia Natl Labs, POB 5800, Albuquerque, NM 87185 USA Sandia Natl Labs, POB 5800, Albuquerque, NM 87185 USAMarinella, Matthew J.论文数: 0 引用数: 0 h-index: 0机构: Sandia Natl Labs, POB 5800, Albuquerque, NM 87185 USA Sandia Natl Labs, POB 5800, Albuquerque, NM 87185 USA
- [28] Nonvolatile Unipolar Memristive Switching Mechanism of Pulse Laser Ablated NiO Films2009 2ND INTERNATIONAL WORKSHOP ON ELECTRON DEVICES AND SEMICONDUCTOR TECHNOLOGY, 2009, : 82 - 86Panda, Debashis论文数: 0 引用数: 0 h-index: 0机构: Indian Inst Technol, Dept Phys & Meteorol, Kharagpur 721302, W Bengal, India Indian Inst Technol, Dept Phys & Meteorol, Kharagpur 721302, W Bengal, IndiaDhar, Achintya论文数: 0 引用数: 0 h-index: 0机构: Indian Inst Technol, Dept Phys & Meteorol, Kharagpur 721302, W Bengal, India Indian Inst Technol, Dept Phys & Meteorol, Kharagpur 721302, W Bengal, IndiaRay, Samit K.论文数: 0 引用数: 0 h-index: 0机构: Indian Inst Technol, Dept Phys & Meteorol, Kharagpur 721302, W Bengal, India Indian Inst Technol, Dept Phys & Meteorol, Kharagpur 721302, W Bengal, India
- [29] Electrophysical properties, memristive and resistive switching of charged domain walls in lithium niobateModern Electronic Materials, 2023, 9 (04): : 145 - 161Kislyuk A.M.论文数: 0 引用数: 0 h-index: 0机构: National University of Science and Technology “MISIS”, 4-1 Leninsky Ave, Moscow National University of Science and Technology “MISIS”, 4-1 Leninsky Ave, MoscowKubasov I.V.论文数: 0 引用数: 0 h-index: 0机构: National University of Science and Technology “MISIS”, 4-1 Leninsky Ave, Moscow National University of Science and Technology “MISIS”, 4-1 Leninsky Ave, MoscowTemirov A.A.论文数: 0 引用数: 0 h-index: 0机构: National University of Science and Technology “MISIS”, 4-1 Leninsky Ave, Moscow National University of Science and Technology “MISIS”, 4-1 Leninsky Ave, MoscowTurutin A.V.论文数: 0 引用数: 0 h-index: 0机构: National University of Science and Technology “MISIS”, 4-1 Leninsky Ave, Moscow National University of Science and Technology “MISIS”, 4-1 Leninsky Ave, MoscowShportenko A.S.论文数: 0 引用数: 0 h-index: 0机构: National University of Science and Technology “MISIS”, 4-1 Leninsky Ave, Moscow National University of Science and Technology “MISIS”, 4-1 Leninsky Ave, MoscowKuts V.V.论文数: 0 引用数: 0 h-index: 0机构: National University of Science and Technology “MISIS”, 4-1 Leninsky Ave, Moscow National University of Science and Technology “MISIS”, 4-1 Leninsky Ave, MoscowMalinkovich M.D.论文数: 0 引用数: 0 h-index: 0机构: National University of Science and Technology “MISIS”, 4-1 Leninsky Ave, Moscow National University of Science and Technology “MISIS”, 4-1 Leninsky Ave, Moscow
- [30] Applicability of Well-Established Memristive Models for Simulations of Resistive Switching DevicesIEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS, 2014, 61 (08) : 2402 - 2410Linn, Eike论文数: 0 引用数: 0 h-index: 0机构: Rhein Westfal TH Aachen, Inst Werkstoffe Elektrotech II, D-52074 Aachen, Germany Rhein Westfal TH Aachen, JARA FIT, D-52074 Aachen, Germany Rhein Westfal TH Aachen, Inst Werkstoffe Elektrotech II, D-52074 Aachen, GermanySiemon, Anne论文数: 0 引用数: 0 h-index: 0机构: Rhein Westfal TH Aachen, Inst Werkstoffe Elektrotech II, D-52074 Aachen, Germany Rhein Westfal TH Aachen, JARA FIT, D-52074 Aachen, Germany Rhein Westfal TH Aachen, Inst Werkstoffe Elektrotech II, D-52074 Aachen, GermanyWaser, Rainer论文数: 0 引用数: 0 h-index: 0机构: Rhein Westfal TH Aachen, Inst Werkstoffe Elektrotech II, D-52074 Aachen, Germany Rhein Westfal TH Aachen, JARA FIT, D-52074 Aachen, Germany Forschungszentrum Julich, Peter Grunberg Inst 7, D-52425 Julich, Germany Forschungszentrum Julich, JARA FIT, D-52425 Julich, Germany Rhein Westfal TH Aachen, Inst Werkstoffe Elektrotech II, D-52074 Aachen, GermanyMenzel, Stephan论文数: 0 引用数: 0 h-index: 0机构: Forschungszentrum Julich, Peter Grunberg Inst 7, D-52425 Julich, Germany Forschungszentrum Julich, JARA FIT, D-52425 Julich, Germany Rhein Westfal TH Aachen, Inst Werkstoffe Elektrotech II, D-52074 Aachen, Germany