共 50 条
[21]
Utilizing NDR effect to reduce switching threshold variations in memristive devices
[J].
Fabien Alibart
;
Dmitri B. Strukov
.
Applied Physics A,
2013, 111
:199-202

Fabien Alibart
论文数: 0 引用数: 0
h-index: 0
机构: University of California Santa Barbara,Department of Electrical and Computer Engineering

Dmitri B. Strukov
论文数: 0 引用数: 0
h-index: 0
机构: University of California Santa Barbara,Department of Electrical and Computer Engineering
[22]
Utilizing NDR effect to reduce switching threshold variations in memristive devices
[J].
Alibart, Fabien
;
Strukov, Dmitri B.
.
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING,
2013, 111 (01)
:199-202

Alibart, Fabien
论文数: 0 引用数: 0
h-index: 0
机构:
Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA

Strukov, Dmitri B.
论文数: 0 引用数: 0
h-index: 0
机构:
Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA
[23]
Memristive devices based on mass printed organic resistive switching layers
[J].
Strutwolf, Jorg
;
Chen, Yong
;
Ullrich, Johann
;
Dehnert, Martin
;
Huebler, Arved C.
.
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING,
2021, 127 (09)

Strutwolf, Jorg
论文数: 0 引用数: 0
h-index: 0
机构:
Tech Univ Chemnitz, Inst Print & Media Technol, D-09107 Chemnitz, Germany Tech Univ Chemnitz, Inst Print & Media Technol, D-09107 Chemnitz, Germany

Chen, Yong
论文数: 0 引用数: 0
h-index: 0
机构:
Tech Univ Chemnitz, Inst Print & Media Technol, D-09107 Chemnitz, Germany Tech Univ Chemnitz, Inst Print & Media Technol, D-09107 Chemnitz, Germany

Ullrich, Johann
论文数: 0 引用数: 0
h-index: 0
机构:
Tech Univ Chemnitz, Inst Print & Media Technol, D-09107 Chemnitz, Germany Tech Univ Chemnitz, Inst Print & Media Technol, D-09107 Chemnitz, Germany

Dehnert, Martin
论文数: 0 引用数: 0
h-index: 0
机构:
Tech Univ Chemnitz, Inst Phys, D-09107 Chemnitz, Germany Tech Univ Chemnitz, Inst Print & Media Technol, D-09107 Chemnitz, Germany

Huebler, Arved C.
论文数: 0 引用数: 0
h-index: 0
机构:
Tech Univ Chemnitz, Inst Print & Media Technol, D-09107 Chemnitz, Germany Tech Univ Chemnitz, Inst Print & Media Technol, D-09107 Chemnitz, Germany
[24]
Memristive devices based on mass printed organic resistive switching layers
[J].
Jörg Strutwolf
;
Yong Chen
;
Johann Ullrich
;
Martin Dehnert
;
Arved C. Hübler
.
Applied Physics A,
2021, 127

Jörg Strutwolf
论文数: 0 引用数: 0
h-index: 0
机构: Chemnitz University of Technology,Institute for Print and Media Technology

Yong Chen
论文数: 0 引用数: 0
h-index: 0
机构: Chemnitz University of Technology,Institute for Print and Media Technology

Johann Ullrich
论文数: 0 引用数: 0
h-index: 0
机构: Chemnitz University of Technology,Institute for Print and Media Technology

Martin Dehnert
论文数: 0 引用数: 0
h-index: 0
机构: Chemnitz University of Technology,Institute for Print and Media Technology

Arved C. Hübler
论文数: 0 引用数: 0
h-index: 0
机构: Chemnitz University of Technology,Institute for Print and Media Technology
[25]
Memristive switching in the surface of a charge-density-wave topological semimetal
[J].
Ma, Jianwen
;
Meng, Xianghao
;
Zhang, Binhua
;
Wang, Yuxiang
;
Mou, Yicheng
;
Lin, Wenting
;
Dai, Yannan
;
Chen, Luqiu
;
Wang, Haonan
;
Wu, Haoqi
;
Gu, Jiaming
;
Wang, Jiayu
;
Du, Yuhan
;
Liu, Chunsen
;
Shi, Wu
;
Yang, Zhenzhong
;
Tian, Bobo
;
Miao, Lin
;
Zhou, Peng
;
Duan, Chun-Gang
;
Xu, Changsong
;
Yuan, Xiang
;
Zhang, Cheng
.
SCIENCE BULLETIN,
2024, 69 (13)
:2042-2049

Ma, Jianwen
论文数: 0 引用数: 0
h-index: 0
机构:
Fudan Univ, State Key Lab Surface Phys, Shanghai 200433, Peoples R China
Fudan Univ, Inst Nanoelect Devices & Quantum Comp, Shanghai 200433, Peoples R China Fudan Univ, State Key Lab Surface Phys, Shanghai 200433, Peoples R China

Meng, Xianghao
论文数: 0 引用数: 0
h-index: 0
机构:
East China Normal Univ, State Key Lab Precis Spect, Shanghai 200241, Peoples R China Fudan Univ, State Key Lab Surface Phys, Shanghai 200433, Peoples R China

Zhang, Binhua
论文数: 0 引用数: 0
h-index: 0
机构:
Fudan Univ, Inst Computat Phys Sci, Dept Phys, Key Lab Computat Phys Sci,State Key Lab Surface Ph, Shanghai 200433, Peoples R China
Shanghai Qi Zhi Inst, Shanghai 200030, Peoples R China Fudan Univ, State Key Lab Surface Phys, Shanghai 200433, Peoples R China

Wang, Yuxiang
论文数: 0 引用数: 0
h-index: 0
机构:
Fudan Univ, State Key Lab Surface Phys, Shanghai 200433, Peoples R China
Fudan Univ, Inst Nanoelect Devices & Quantum Comp, Shanghai 200433, Peoples R China Fudan Univ, State Key Lab Surface Phys, Shanghai 200433, Peoples R China

Mou, Yicheng
论文数: 0 引用数: 0
h-index: 0
机构:
Fudan Univ, State Key Lab Surface Phys, Shanghai 200433, Peoples R China
Fudan Univ, Inst Nanoelect Devices & Quantum Comp, Shanghai 200433, Peoples R China Fudan Univ, State Key Lab Surface Phys, Shanghai 200433, Peoples R China

Lin, Wenting
论文数: 0 引用数: 0
h-index: 0
机构:
Southeast Univ, Sch Phys, Nanjing 211189, Peoples R China Fudan Univ, State Key Lab Surface Phys, Shanghai 200433, Peoples R China

Dai, Yannan
论文数: 0 引用数: 0
h-index: 0
机构:
East China Normal Univ, Dept Elect, Key Lab Polar Mat & Devices, Minist Educ, Shanghai 200241, Peoples R China
East China Normal Univ, Shanghai Ctr Brain inspired Intelligent Mat & Devi, Shanghai 200241, Peoples R China Fudan Univ, State Key Lab Surface Phys, Shanghai 200433, Peoples R China

Chen, Luqiu
论文数: 0 引用数: 0
h-index: 0
机构:
East China Normal Univ, Dept Elect, Key Lab Polar Mat & Devices, Minist Educ, Shanghai 200241, Peoples R China
East China Normal Univ, Shanghai Ctr Brain inspired Intelligent Mat & Devi, Shanghai 200241, Peoples R China Fudan Univ, State Key Lab Surface Phys, Shanghai 200433, Peoples R China

Wang, Haonan
论文数: 0 引用数: 0
h-index: 0
机构:
East China Normal Univ, Dept Elect, Key Lab Polar Mat & Devices, Minist Educ, Shanghai 200241, Peoples R China Fudan Univ, State Key Lab Surface Phys, Shanghai 200433, Peoples R China

Wu, Haoqi
论文数: 0 引用数: 0
h-index: 0
机构:
Fudan Univ, Sch Microelect, State Key Lab ASIC & Syst, Shanghai 200433, Peoples R China Fudan Univ, State Key Lab Surface Phys, Shanghai 200433, Peoples R China

Gu, Jiaming
论文数: 0 引用数: 0
h-index: 0
机构:
Fudan Univ, State Key Lab Surface Phys, Shanghai 200433, Peoples R China
Fudan Univ, Inst Nanoelect Devices & Quantum Comp, Shanghai 200433, Peoples R China Fudan Univ, State Key Lab Surface Phys, Shanghai 200433, Peoples R China

Wang, Jiayu
论文数: 0 引用数: 0
h-index: 0
机构:
Fudan Univ, State Key Lab Surface Phys, Shanghai 200433, Peoples R China
Fudan Univ, Inst Nanoelect Devices & Quantum Comp, Shanghai 200433, Peoples R China Fudan Univ, State Key Lab Surface Phys, Shanghai 200433, Peoples R China

Du, Yuhan
论文数: 0 引用数: 0
h-index: 0
机构:
East China Normal Univ, State Key Lab Precis Spect, Shanghai 200241, Peoples R China Fudan Univ, State Key Lab Surface Phys, Shanghai 200433, Peoples R China

Liu, Chunsen
论文数: 0 引用数: 0
h-index: 0
机构:
Fudan Univ, Frontier Inst Chip & Syst, Shanghai 200433, Peoples R China Fudan Univ, State Key Lab Surface Phys, Shanghai 200433, Peoples R China

Shi, Wu
论文数: 0 引用数: 0
h-index: 0
机构:
Fudan Univ, State Key Lab Surface Phys, Shanghai 200433, Peoples R China
Fudan Univ, Inst Nanoelect Devices & Quantum Comp, Shanghai 200433, Peoples R China
Fudan Univ, Zhangjiang Fudan Int Innovat Ctr, Shanghai 201210, Peoples R China Fudan Univ, State Key Lab Surface Phys, Shanghai 200433, Peoples R China

Yang, Zhenzhong
论文数: 0 引用数: 0
h-index: 0
机构:
East China Normal Univ, Dept Elect, Key Lab Polar Mat & Devices, Minist Educ, Shanghai 200241, Peoples R China Fudan Univ, State Key Lab Surface Phys, Shanghai 200433, Peoples R China

Tian, Bobo
论文数: 0 引用数: 0
h-index: 0
机构:
East China Normal Univ, Dept Elect, Key Lab Polar Mat & Devices, Minist Educ, Shanghai 200241, Peoples R China
East China Normal Univ, Shanghai Ctr Brain inspired Intelligent Mat & Devi, Shanghai 200241, Peoples R China Fudan Univ, State Key Lab Surface Phys, Shanghai 200433, Peoples R China

Miao, Lin
论文数: 0 引用数: 0
h-index: 0
机构:
Southeast Univ, Sch Phys, Nanjing 211189, Peoples R China Fudan Univ, State Key Lab Surface Phys, Shanghai 200433, Peoples R China

Zhou, Peng
论文数: 0 引用数: 0
h-index: 0
机构:
Fudan Univ, Sch Microelect, State Key Lab ASIC & Syst, Shanghai 200433, Peoples R China
Fudan Univ, Frontier Inst Chip & Syst, Shanghai 200433, Peoples R China Fudan Univ, State Key Lab Surface Phys, Shanghai 200433, Peoples R China

Duan, Chun-Gang
论文数: 0 引用数: 0
h-index: 0
机构:
East China Normal Univ, Dept Elect, Key Lab Polar Mat & Devices, Minist Educ, Shanghai 200241, Peoples R China
East China Normal Univ, Shanghai Ctr Brain inspired Intelligent Mat & Devi, Shanghai 200241, Peoples R China Fudan Univ, State Key Lab Surface Phys, Shanghai 200433, Peoples R China

Xu, Changsong
论文数: 0 引用数: 0
h-index: 0
机构:
Fudan Univ, Inst Computat Phys Sci, Dept Phys, Key Lab Computat Phys Sci,State Key Lab Surface Ph, Shanghai 200433, Peoples R China
Shanghai Qi Zhi Inst, Shanghai 200030, Peoples R China Fudan Univ, State Key Lab Surface Phys, Shanghai 200433, Peoples R China

Yuan, Xiang
论文数: 0 引用数: 0
h-index: 0
机构:
East China Normal Univ, State Key Lab Precis Spect, Shanghai 200241, Peoples R China
East China Normal Univ, Shanghai Ctr Brain inspired Intelligent Mat & Devi, Shanghai 200241, Peoples R China
East China Normal Univ, Sch Phys & Elect Sci, Shanghai 200241, Peoples R China Fudan Univ, State Key Lab Surface Phys, Shanghai 200433, Peoples R China

Zhang, Cheng
论文数: 0 引用数: 0
h-index: 0
机构:
Fudan Univ, State Key Lab Surface Phys, Shanghai 200433, Peoples R China
Fudan Univ, Inst Nanoelect Devices & Quantum Comp, Shanghai 200433, Peoples R China
Fudan Univ, Zhangjiang Fudan Int Innovat Ctr, Shanghai 201210, Peoples R China Fudan Univ, State Key Lab Surface Phys, Shanghai 200433, Peoples R China
[26]
Multilayer Metal-Oxide Memristive Device with Stabilized Resistive Switching
[J].
Mikhaylov, Alexey
;
Belov, Alexey
;
Korolev, Dmitry
;
Antonov, Ivan
;
Kotomina, Valentina
;
Kotina, Alina
;
Gryaznov, Evgeny
;
Sharapov, Alexander
;
Koryazhkina, Maria
;
Kryukov, Ruslan
;
Zubkov, Sergey
;
Sushkov, Artem
;
Pavlov, Dmitry
;
Tikhov, Stanislav
;
Morozov, Oleg
;
Tetelbaum, David
.
ADVANCED MATERIALS TECHNOLOGIES,
2020, 5 (01)

Mikhaylov, Alexey
论文数: 0 引用数: 0
h-index: 0
机构:
Lobachevsky Univ, 23-3 Gagarin Prospect, Nizhnii Novgorod 603950, Russia Lobachevsky Univ, 23-3 Gagarin Prospect, Nizhnii Novgorod 603950, Russia

Belov, Alexey
论文数: 0 引用数: 0
h-index: 0
机构:
Lobachevsky Univ, 23-3 Gagarin Prospect, Nizhnii Novgorod 603950, Russia Lobachevsky Univ, 23-3 Gagarin Prospect, Nizhnii Novgorod 603950, Russia

Korolev, Dmitry
论文数: 0 引用数: 0
h-index: 0
机构:
Lobachevsky Univ, 23-3 Gagarin Prospect, Nizhnii Novgorod 603950, Russia Lobachevsky Univ, 23-3 Gagarin Prospect, Nizhnii Novgorod 603950, Russia

Antonov, Ivan
论文数: 0 引用数: 0
h-index: 0
机构:
Lobachevsky Univ, 23-3 Gagarin Prospect, Nizhnii Novgorod 603950, Russia Lobachevsky Univ, 23-3 Gagarin Prospect, Nizhnii Novgorod 603950, Russia

Kotomina, Valentina
论文数: 0 引用数: 0
h-index: 0
机构:
Lobachevsky Univ, 23-3 Gagarin Prospect, Nizhnii Novgorod 603950, Russia Lobachevsky Univ, 23-3 Gagarin Prospect, Nizhnii Novgorod 603950, Russia

Kotina, Alina
论文数: 0 引用数: 0
h-index: 0
机构:
Lobachevsky Univ, 23-3 Gagarin Prospect, Nizhnii Novgorod 603950, Russia Lobachevsky Univ, 23-3 Gagarin Prospect, Nizhnii Novgorod 603950, Russia

Gryaznov, Evgeny
论文数: 0 引用数: 0
h-index: 0
机构:
Lobachevsky Univ, 23-3 Gagarin Prospect, Nizhnii Novgorod 603950, Russia Lobachevsky Univ, 23-3 Gagarin Prospect, Nizhnii Novgorod 603950, Russia

Sharapov, Alexander
论文数: 0 引用数: 0
h-index: 0
机构:
Lobachevsky Univ, 23-3 Gagarin Prospect, Nizhnii Novgorod 603950, Russia Lobachevsky Univ, 23-3 Gagarin Prospect, Nizhnii Novgorod 603950, Russia

Koryazhkina, Maria
论文数: 0 引用数: 0
h-index: 0
机构:
Lobachevsky Univ, 23-3 Gagarin Prospect, Nizhnii Novgorod 603950, Russia Lobachevsky Univ, 23-3 Gagarin Prospect, Nizhnii Novgorod 603950, Russia

Kryukov, Ruslan
论文数: 0 引用数: 0
h-index: 0
机构:
Lobachevsky Univ, 23-3 Gagarin Prospect, Nizhnii Novgorod 603950, Russia Lobachevsky Univ, 23-3 Gagarin Prospect, Nizhnii Novgorod 603950, Russia

Zubkov, Sergey
论文数: 0 引用数: 0
h-index: 0
机构:
Lobachevsky Univ, 23-3 Gagarin Prospect, Nizhnii Novgorod 603950, Russia Lobachevsky Univ, 23-3 Gagarin Prospect, Nizhnii Novgorod 603950, Russia

Sushkov, Artem
论文数: 0 引用数: 0
h-index: 0
机构:
Lobachevsky Univ, 23-3 Gagarin Prospect, Nizhnii Novgorod 603950, Russia Lobachevsky Univ, 23-3 Gagarin Prospect, Nizhnii Novgorod 603950, Russia

Pavlov, Dmitry
论文数: 0 引用数: 0
h-index: 0
机构:
Lobachevsky Univ, 23-3 Gagarin Prospect, Nizhnii Novgorod 603950, Russia Lobachevsky Univ, 23-3 Gagarin Prospect, Nizhnii Novgorod 603950, Russia

Tikhov, Stanislav
论文数: 0 引用数: 0
h-index: 0
机构:
Lobachevsky Univ, 23-3 Gagarin Prospect, Nizhnii Novgorod 603950, Russia Lobachevsky Univ, 23-3 Gagarin Prospect, Nizhnii Novgorod 603950, Russia

Morozov, Oleg
论文数: 0 引用数: 0
h-index: 0
机构:
Lobachevsky Univ, 23-3 Gagarin Prospect, Nizhnii Novgorod 603950, Russia Lobachevsky Univ, 23-3 Gagarin Prospect, Nizhnii Novgorod 603950, Russia

Tetelbaum, David
论文数: 0 引用数: 0
h-index: 0
机构:
Lobachevsky Univ, 23-3 Gagarin Prospect, Nizhnii Novgorod 603950, Russia Lobachevsky Univ, 23-3 Gagarin Prospect, Nizhnii Novgorod 603950, Russia
[27]
Forming compliance dominated memristive switching through interfacial reaction in Ti/TiO2/Au structure
[J].
Tang, Zhensen
;
Fang, Liang
;
Xu, Nuo
;
Liu, Rulin
.
JOURNAL OF APPLIED PHYSICS,
2015, 118 (18)

Tang, Zhensen
论文数: 0 引用数: 0
h-index: 0
机构:
Natl Univ Def Technol, State Key Lab High Performance Comp, Changsha 410073, Hunan, Peoples R China
Natl Univ Def Technol, Coll Comp, Changsha 410073, Hunan, Peoples R China Natl Univ Def Technol, State Key Lab High Performance Comp, Changsha 410073, Hunan, Peoples R China

Fang, Liang
论文数: 0 引用数: 0
h-index: 0
机构:
Natl Univ Def Technol, State Key Lab High Performance Comp, Changsha 410073, Hunan, Peoples R China
Natl Univ Def Technol, Coll Comp, Changsha 410073, Hunan, Peoples R China Natl Univ Def Technol, State Key Lab High Performance Comp, Changsha 410073, Hunan, Peoples R China

Xu, Nuo
论文数: 0 引用数: 0
h-index: 0
机构:
Natl Univ Def Technol, State Key Lab High Performance Comp, Changsha 410073, Hunan, Peoples R China
Natl Univ Def Technol, Coll Comp, Changsha 410073, Hunan, Peoples R China Natl Univ Def Technol, State Key Lab High Performance Comp, Changsha 410073, Hunan, Peoples R China

Liu, Rulin
论文数: 0 引用数: 0
h-index: 0
机构:
Natl Univ Def Technol, State Key Lab High Performance Comp, Changsha 410073, Hunan, Peoples R China
Natl Univ Def Technol, Coll Comp, Changsha 410073, Hunan, Peoples R China Natl Univ Def Technol, State Key Lab High Performance Comp, Changsha 410073, Hunan, Peoples R China
[28]
Power signatures of electric field and thermal switching regimes in memristive SET transitions
[J].
Mickel, Patrick R.
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Hughart, David
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Lohn, Andrew J.
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Gao, Xujiao
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Mamaluy, Denis
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Marinella, Matthew J.
.
JOURNAL OF PHYSICS D-APPLIED PHYSICS,
2016, 49 (24)

Mickel, Patrick R.
论文数: 0 引用数: 0
h-index: 0
机构:
Sandia Natl Labs, POB 5800, Albuquerque, NM 87185 USA Sandia Natl Labs, POB 5800, Albuquerque, NM 87185 USA

Hughart, David
论文数: 0 引用数: 0
h-index: 0
机构:
Sandia Natl Labs, POB 5800, Albuquerque, NM 87185 USA Sandia Natl Labs, POB 5800, Albuquerque, NM 87185 USA

Lohn, Andrew J.
论文数: 0 引用数: 0
h-index: 0
机构:
Sandia Natl Labs, POB 5800, Albuquerque, NM 87185 USA Sandia Natl Labs, POB 5800, Albuquerque, NM 87185 USA

Gao, Xujiao
论文数: 0 引用数: 0
h-index: 0
机构:
Sandia Natl Labs, POB 5800, Albuquerque, NM 87185 USA Sandia Natl Labs, POB 5800, Albuquerque, NM 87185 USA

Mamaluy, Denis
论文数: 0 引用数: 0
h-index: 0
机构:
Sandia Natl Labs, POB 5800, Albuquerque, NM 87185 USA Sandia Natl Labs, POB 5800, Albuquerque, NM 87185 USA

Marinella, Matthew J.
论文数: 0 引用数: 0
h-index: 0
机构:
Sandia Natl Labs, POB 5800, Albuquerque, NM 87185 USA Sandia Natl Labs, POB 5800, Albuquerque, NM 87185 USA
[29]
Applicability of Well-Established Memristive Models for Simulations of Resistive Switching Devices
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Linn, Eike
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Siemon, Anne
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Waser, Rainer
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Menzel, Stephan
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IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS,
2014, 61 (08)
:2402-2410

Linn, Eike
论文数: 0 引用数: 0
h-index: 0
机构:
Rhein Westfal TH Aachen, Inst Werkstoffe Elektrotech II, D-52074 Aachen, Germany
Rhein Westfal TH Aachen, JARA FIT, D-52074 Aachen, Germany Rhein Westfal TH Aachen, Inst Werkstoffe Elektrotech II, D-52074 Aachen, Germany

Siemon, Anne
论文数: 0 引用数: 0
h-index: 0
机构:
Rhein Westfal TH Aachen, Inst Werkstoffe Elektrotech II, D-52074 Aachen, Germany
Rhein Westfal TH Aachen, JARA FIT, D-52074 Aachen, Germany Rhein Westfal TH Aachen, Inst Werkstoffe Elektrotech II, D-52074 Aachen, Germany

Waser, Rainer
论文数: 0 引用数: 0
h-index: 0
机构:
Rhein Westfal TH Aachen, Inst Werkstoffe Elektrotech II, D-52074 Aachen, Germany
Rhein Westfal TH Aachen, JARA FIT, D-52074 Aachen, Germany
Forschungszentrum Julich, Peter Grunberg Inst 7, D-52425 Julich, Germany
Forschungszentrum Julich, JARA FIT, D-52425 Julich, Germany Rhein Westfal TH Aachen, Inst Werkstoffe Elektrotech II, D-52074 Aachen, Germany

Menzel, Stephan
论文数: 0 引用数: 0
h-index: 0
机构:
Forschungszentrum Julich, Peter Grunberg Inst 7, D-52425 Julich, Germany
Forschungszentrum Julich, JARA FIT, D-52425 Julich, Germany Rhein Westfal TH Aachen, Inst Werkstoffe Elektrotech II, D-52074 Aachen, Germany
[30]
Nonvolatile Unipolar Memristive Switching Mechanism of Pulse Laser Ablated NiO Films
[J].
Panda, Debashis
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Dhar, Achintya
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Ray, Samit K.
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2009 2ND INTERNATIONAL WORKSHOP ON ELECTRON DEVICES AND SEMICONDUCTOR TECHNOLOGY,
2009,
:82-86

Panda, Debashis
论文数: 0 引用数: 0
h-index: 0
机构:
Indian Inst Technol, Dept Phys & Meteorol, Kharagpur 721302, W Bengal, India Indian Inst Technol, Dept Phys & Meteorol, Kharagpur 721302, W Bengal, India

Dhar, Achintya
论文数: 0 引用数: 0
h-index: 0
机构:
Indian Inst Technol, Dept Phys & Meteorol, Kharagpur 721302, W Bengal, India Indian Inst Technol, Dept Phys & Meteorol, Kharagpur 721302, W Bengal, India

Ray, Samit K.
论文数: 0 引用数: 0
h-index: 0
机构:
Indian Inst Technol, Dept Phys & Meteorol, Kharagpur 721302, W Bengal, India Indian Inst Technol, Dept Phys & Meteorol, Kharagpur 721302, W Bengal, India