Optical and photoinduced phenomena in chalcogenide glasses As2S3 and As2Se3 and explanation of the observed correlations

被引：0
|
作者：
Banik, I. [1 ]
机构：
[1] Slovak Univ Technol Bratislava, Fac CE, Dept Phys, Radlinskeho 11, Bratislava 81005, Slovakia
来源：
JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS | 2016年 / 18卷 / 3-4期
关键词：
Chalcogenide glass; Photoinduced changes; Mid-gap absorption; Photoluminescence spectrum; ESR signal; Barrier-cluster-heating model; LOCALIZED PARAMAGNETIC STATES; BARRIER-CLUSTER MODEL; PHOTOLUMINESCENCE; SEMICONDUCTORS; BASE; GAP;
D O I：
暂无
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
In paper is presented an idea allowed to explain empirically found optically induced phenomena - mid-gap absorption, fatigue effect, ESR signal and mutual correlations of these phenomena. We assume that the above mentioned effects are closely related to photoluminescence. We suppose that photoluminescence creates conditions for the formation of photoinduced short-living traps in the center of the band gap, in region of photoluminescence spectrum. The starting point of our considerations is barrier-cluster-heating model.
引用
收藏
页码：226 / 234
页数：9
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