Iterative boundary element method for crack analysis of two-dimensional piezoelectric semiconductor

被引：18
作者：
Zhang, QiaoYun [1 ]
Fan, CuiYing [2 ,3 ]
Xu, GuangTao [2 ,3 ]
Zhao, MingHao [1 ,2 ,3 ]
机构：
[1] Zhengzhou Univ, Sch Mech & Engn Sci, Zhengzhou 450001, Henan, Peoples R China
[2] Zhengzhou Univ, Henan Key Engn Lab Antifatigue Mfg Technol, Zhengzhou 450001, Henan, Peoples R China
[3] Zhengzhou Univ, Sch Mech Engn, Zhengzhou 450001, Henan, Peoples R China
来源：
ENGINEERING ANALYSIS WITH BOUNDARY ELEMENTS | 2017年 / 83卷
基金：
中国国家自然科学基金;
关键词：
Piezoelectric semiconductors; Iterative boundary element method; Elliptical hole; Crack; Intensity factors; FUNDAMENTAL-SOLUTIONS; FRACTURE-ANALYSIS; FIELD;
D O I：
10.1016/j.enganabound.2017.07.002
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Based on the well-developed boundary element methods for piezoelectric media and conductors, we present an iterative boundary element method to solve the boundary value problems in two-dimensional piezoelectric semiconductors (PSCs). The proposed method is verified by analyzing a piezoelectric semiconductor plate under multi-field load. Two typically important boundary value problems, a hole and a crack, are studied in PSC plates by using the proposed method. The stress concentration near the edge of an elliptical hole in a finite piezoelectric semiconductor plate is studied by using the single-domain boundary element method. Also, by using the sub domain boundary element method, we analyzed how the mechanical load, electrical load, electric current density, and initial electron density affected the stress, electric displacement and electric current intensity factors near the crack tip. (C) 2017 Elsevier Ltd. All rights reserved.
引用
收藏
页码：87 / 95
页数：9
相关论文
共 30 条
  • [21] Nanopiezotronics
    Wang, Zhong Lin
    [J]. ADVANCED MATERIALS, 2007, 19 (06) : 889 - 892
  • [22] Piezotronics and piezo-phototronics: fundamentals and applications
    Wang, Zhong Lin
    Wu, Wenzhuo
    [J]. NATIONAL SCIENCE REVIEW, 2014, 1 (01) : 62 - 90
  • [23] Semiconducting and piezoelectric oxide nanostructures induced by polar surfaces
    Wang, ZL
    Kong, XY
    Ding, Y
    Gao, PX
    Hughes, WL
    Yang, RS
    Zhang, Y
    [J]. ADVANCED FUNCTIONAL MATERIALS, 2004, 14 (10) : 943 - 956
  • [24] Development and progress in piezotronics
    Wen, Xiaonan
    Wu, Wenzhuo
    Pan, Caofeng
    Hu, Youfan
    Yang, Qing
    Wang, Zhong Lin
    [J]. NANO ENERGY, 2015, 14 : 276 - 295
  • [25] White D.L, 1962, PTGMTT NATL S DIGEST, V63, P199, DOI [10.1109/PTGMTT.1963.1123249, DOI 10.1109/PTGMTT.1963.1123249]
  • [26] Dynamic crack analysis in piezoelectric solids with non-linear electrical and mechanical boundary conditions by a time-domain BEM
    Wuensche, M.
    Zhang, Ch
    Garcia-Sanchez, F.
    Saez, A.
    Sladek, J.
    Sladek, V.
    [J]. COMPUTER METHODS IN APPLIED MECHANICS AND ENGINEERING, 2011, 200 (41-44) : 2848 - 2858
  • [27] Analysis of a circular piezoelectric semiconductor embedded in a piezoelectric semiconductor substrate
    Yang, J. S.
    Song, Y. C.
    Soh, A. K.
    [J]. ARCHIVE OF APPLIED MECHANICS, 2006, 76 (7-8) : 381 - 390
  • [28] A semi-infinite anti-plane crack in a piezoelectric semiconductor
    Yang, JS
    [J]. INTERNATIONAL JOURNAL OF FRACTURE, 2004, 130 (03) : L169 - L174
  • [29] Extended displacement discontinuity method for analysis of cracks in 2D piezoelectric semiconductors
    Zhao, MingHao
    Pan, YiBo
    Fan, CuiYing
    Xu, GuangTao
    [J]. INTERNATIONAL JOURNAL OF SOLIDS AND STRUCTURES, 2016, 94-95 : 50 - 59
  • [30] Singularity analysis of planar cracks in three-dimensional piezoelectric semiconductors via extended displacement discontinuity boundary integral equation method
    Zhao, MingHao
    Li, Yuan
    Yan, Yang
    Fan, CuiYing
    [J]. ENGINEERING ANALYSIS WITH BOUNDARY ELEMENTS, 2016, 67 : 115 - 125
123