Iterative boundary element method for crack analysis of two-dimensional piezoelectric semiconductor

被引：17

作者：

Zhang, QiaoYun ^{[1
]}

Fan, CuiYing ^{[2
,3
]}

Xu, GuangTao ^{[2
,3
]}

Zhao, MingHao ^{[1
,2
,3
]}

机构：

[1] Zhengzhou Univ, Sch Mech & Engn Sci, Zhengzhou 450001, Henan, Peoples R China

[2] Zhengzhou Univ, Henan Key Engn Lab Antifatigue Mfg Technol, Zhengzhou 450001, Henan, Peoples R China

[3] Zhengzhou Univ, Sch Mech Engn, Zhengzhou 450001, Henan, Peoples R China

来源：

ENGINEERING ANALYSIS WITH BOUNDARY ELEMENTS | 2017年 / 83卷

基金：

中国国家自然科学基金;

关键词：

Piezoelectric semiconductors; Iterative boundary element method; Elliptical hole; Crack; Intensity factors; FUNDAMENTAL-SOLUTIONS; FRACTURE-ANALYSIS; FIELD;

D O I：

10.1016/j.enganabound.2017.07.002

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Based on the well-developed boundary element methods for piezoelectric media and conductors, we present an iterative boundary element method to solve the boundary value problems in two-dimensional piezoelectric semiconductors (PSCs). The proposed method is verified by analyzing a piezoelectric semiconductor plate under multi-field load. Two typically important boundary value problems, a hole and a crack, are studied in PSC plates by using the proposed method. The stress concentration near the edge of an elliptical hole in a finite piezoelectric semiconductor plate is studied by using the single-domain boundary element method. Also, by using the sub domain boundary element method, we analyzed how the mechanical load, electrical load, electric current density, and initial electron density affected the stress, electric displacement and electric current intensity factors near the crack tip. (C) 2017 Elsevier Ltd. All rights reserved.

引用

页码：87 / 95

页数：9

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