Photoinduced p-Type Conductivity in n-Type ZnO

被引：2
|
作者：
Zhao, W. X. [1 ]
Sun, B. [1 ]
Shen, Z. [1 ]
Liu, Y. H. [1 ]
Chen, P. [1 ]
机构：
[1] Southwest Univ, Sch Phys Sci & Technol, Chongqing 400715, Peoples R China
来源：
JOURNAL OF ELECTRONIC MATERIALS | 2015年 / 44卷 / 03期
关键词：
n-Type ZnO; photoinduced p-type conductivity; light illumination; capacitance-voltage curves; LIGHT-EMITTING-DIODES; ZINC-OXIDE; FILMS; FABRICATION; SEMICONDUCTORS; HYDROGEN; GA;
D O I：
10.1007/s11664-014-3608-1
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Ag/[BaTiO3/gamma-Fe2O3]/ZnO composite films were grown on an n-type silicon (100) single-crystal substrate by magnetron sputtering, and annealed at various temperatures. Capacitance-voltage (C-V) curves show that the capacitance gradually increases with increasing annealed temperature. In addition, ZnO exhibits n-type conductivity in the dark but p-type conductivity under incandescent lamp illumination. The photoinduced p-type conductivity in n-type ZnO should be related to a special n-type ZnO layer originating from high-temperature annealing. The current-voltage (I-V) curves of the [BaTiO3/gamma-Fe2O3]/ZnO thin films display a strong photoconductivity effect.
引用
收藏
页码：1003 / 1007
页数：5
相关论文
共 50 条
  • [21] Investigation of Source of N-Type Conductivity in Bulk ZnO
    Asghar, M.
    Mahmood, K.
    Hasan, M-A
    ADVANCED MATERIALS XII, 2012, 510-511 : 227 - +
  • [22] Oxygen vacancies: The origin of n-type conductivity in ZnO
    Liu, Lishu
    Mei, Zengxia
    Tang, Aihua
    Azarov, Alexander
    Kuznetsov, Andrej
    Xue, Qi-Kun
    Du, Xiaolong
    PHYSICAL REVIEW B, 2016, 93 (23)
  • [23] Photovoltaic Conversion Enhancement of a Carbon Quantum Dots/p-Type CuAlO2/n-Type ZnO Photoelectric Device
    Pan, Jiaqi
    Sheng, Yingzhuo
    Zhang, Jingxiang
    Huang, Peng
    Zhang, Xin
    Feng, Boxue
    ACS APPLIED MATERIALS & INTERFACES, 2015, 7 (15) : 7878 - 7883
  • [24] Selective electroplating of P-type and N-type areas on semiconductor surfaces
    Karmalkar, S
    Oak, S
    Venkatasubramanian, N
    MICROELECTRONICS JOURNAL, 2002, 33 (11) : 967 - 970
  • [25] Sensitization of p-type NiO Using n-type Conducting Polymers
    Chavhan, Sudam I.
    Abellon, Ruben D.
    van Breemen, Albert J. J. M.
    Koetse, Marc M.
    Sweelssen, Jorgen
    Savenije, Tom J.
    JOURNAL OF PHYSICAL CHEMISTRY C, 2010, 114 (45) : 19496 - 19502
  • [26] POSITRON LIFETIME SPECTROSCOPY OF N-TYPE AND P-TYPE POROUS SILICON
    DANNEFAER, S
    BRETAGNON, T
    FOUCARAN, A
    TALIERCIO, T
    KERR, D
    THIN SOLID FILMS, 1995, 255 (1-2) : 171 - 173
  • [27] A pathway to p-type conductivity in (nN, B)-codoped ZnO
    Xiong, Zhihua
    Chen, Lanli
    Zheng, Changda
    Luo, Lan
    Wan, Qixin
    SCRIPTA MATERIALIA, 2010, 63 (11) : 1069 - 1072
  • [28] p-Type conductivity and stability of Ag-N codoped ZnO thin films
    Li, Wanjun
    Kong, Chunyang
    Qin, Guoping
    Ruan, Haibo
    Fang, Liang
    JOURNAL OF ALLOYS AND COMPOUNDS, 2014, 609 : 173 - 177
  • [29] The origin of p-type conduction in (P, N) codoped ZnO
    Tian, Ren-Yu
    Zhao, Yu-Jun
    JOURNAL OF APPLIED PHYSICS, 2009, 106 (04)
  • [30] Sources of n-type conductivity in GaInO3
    Wang, V.
    Xiao, W.
    Kang, L-J
    Liu, R-J
    Mizuseki, H.
    Kawazoe, Y.
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2015, 48 (01)
12345