Determination of the trap-assisted recombination strength in polymer light emitting diodes

被引：53

作者：

Kuik, Martijn ^{[1
]}

Nicolai, Herman T. ^{[1
]}

Lenes, Martijn ^{[1
]}

Wetzelaer, Gert-Jan A. H. ^{[1
]}

Lu, Mingtao ^{[1
]}

Blom, Paul W. M. ^{[1
,2
]}

机构：

[1] Univ Groningen, Zernike Inst Adv Mat, NL-9747 AG Groningen, Netherlands

[2] Holst Ctr, NL-5656 AE Eindhoven, Netherlands

来源：

APPLIED PHYSICS LETTERS | 2011年 / 98卷 / 09期

关键词：

POLY(P-PHENYLENE VINYLENE); SOLAR-CELLS; DEPENDENCE; MOBILITY; TRANSPORT; ELECTRON; EMISSION; DEVICES;

D O I：

10.1063/1.3559911

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The recombination processes in poly(p-phenylene vinylene) based polymer light-emitting diodes (PLEDs) are investigated. Photogenerated current measurements on PLED device structures reveal that next to the known Langevin recombination also trap-assisted recombination is an important recombination channel in PLEDs, which has not been considered until now. The dependence of the open-circuit voltage on light intensity enables us to determine the strength of this process. Numerical modeling of the current-voltage characteristics incorporating both Langevin and trap-assisted recombination yields a correct and consistent description of the PLED, without the traditional correction of the Langevin prefactor. At low bias voltage the trap-assisted recombination rate is found to be dominant over the free carrier recombination rate. (C) 2011 American Institute of Physics. [doi:10.1063/1.3559911]

引用

页数：3

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