Photon antibunching from a single lithographically defined InGaAs/GaAs quantum dot

被引：17

作者：

Verma, V. B. ^{[1
]}

Stevens, Martin J. ^{[1
]}

Silverman, K. L. ^{[1
]}

Dias, N. L. ^{[2
]}

Garg, A. ^{[2
]}

Coleman, J. J. ^{[2
]}

Mirin, R. P. ^{[1
]}

机构：

[1] Natl Inst Stand & Technol, Div Optoelect, Boulder, CO 80305 USA

[2] Univ Illinois, Dept Elect & Comp Engn, Urbana, IL 61801 USA

来源：

OPTICS EXPRESS | 2011年 / 19卷 / 05期

基金：

美国国家科学基金会;

关键词：

CRYPTOGRAPHY; TEMPERATURE; TURNSTILE;

D O I：

10.1364/OE.19.004182

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

We demonstrate photon antibunching from a single lithographically defined quantum dot fabricated by electron beam lithography, wet chemical etching, and overgrowth of the barrier layers by metalorganic chemical vapor deposition. Measurement of the second-order autocorrelation function indicates g((2))(0) = 0.395 +/- 0.030, below the 0.5 limit necessary for classification as a single photon source. (C) 2011 Optical Society of America

引用

页码：4182 / 4187

页数：6

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