Morphological evolution of strained films by cooperative nucleation

被引：139

作者：

Jesson, DE ^{[1
]}

Chen, KM ^{[1
]}

Pennycook, SJ ^{[1
]}

Thundat, T ^{[1
]}

Warmack, RJ ^{[1
]}

机构：

[1] OAK RIDGE NATL LAB,HLTH SCI RES DIV,OAK RIDGE,TN 37831

来源：

PHYSICAL REVIEW LETTERS | 1996年 / 77卷 / 07期

关键词：

D O I：

10.1103/PhysRevLett.77.1330

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We identify a new mechanism of stress driven surface morphological evolution in strained semiconductor films. Surface roughness forms by a cooperative mechanism involving the sequential nucleation of islands and pits, which is distinct from the conventional view of ripple formation as an Asaro-Tiller-Grinfeld (ATG) instability. This mechanism is operative both during annealing and growth and competes with the ATG instability as a kinetic pathway to ripple formation.

引用

页码：1330 / 1333

页数：4

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