AlN avalanche photodetectors

被引：48
作者：
Dahal, R. [1 ]
Al Tahtamouni, T. M. [1 ]
Lin, J. Y. [1 ]
Jiang, H. X. [1 ]
机构：
[1] Kansas State Univ, Dept Phys, Manhattan, KS 66506 USA
来源：
APPLIED PHYSICS LETTERS | 2007年 / 91卷 / 24期
关键词：
D O I：
10.1063/1.2823588
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Deep ultraviolet (DUV) avalanche photodetectors (APDs) based on an AlN/n-SiC Schottky diode structure have been demonstrated. The device with a mesa diameter of similar to 100 mu m exhibits a gain of 1200 at a reverse bias voltage of -250 V or a field of about 3 MV/cm. The cut-off and peak responsivity wavelengths of these APDs were 210 and 200 nm, respectively. This is the highest optical gain and shortest cut-off wavelength achieved for III-nitride based DUV APDs. It was also observed that the reverse breakdown voltage increases with decreasing device size, which suggests that the device performance is limited by the presence of dislocations. The breakdown voltage for dislocation-free AlN was deduced to be about 4.1 MV/cm. The present results further demonstrate the potential of AlN as an active DUV material for future optoelectronic device applications. (C) 2007 American Institute of Physics.
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页数：3
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