Growth of highly oriented (110) γ-CuI film with sharp exciton band

被引：65

作者：

Zheng, Zhi ^{[1
,2
]}

Liu, Airuo ^{[1
]}

Wang, Shumin ^{[1
]}

Huang, Baojun ^{[1
]}

Wong, Ka Wai ^{[2
]}

Zhang, Xitian ^{[2
]}

Hark, Siu Kong ^{[2
]}

Lau, Woon Ming ^{[2
,3
]}

机构：

[1] Xuchang Univ, InsSurface Micro & Nano Mat, Xuchang 461000, Peoples R China

[2] Chinese Univ Hong Kong, Dept Phys, Shatin, Hong Kong, Peoples R China

[3] Univ Western Ontario, London, ON N6A 3K7, Canada

来源：

JOURNAL OF MATERIALS CHEMISTRY | 2008年 / 18卷 / 08期

关键词：

D O I：

10.1039/b719452h

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The growth of highly oriented (110) gamma-CuI films on copper substrates with the best photoluminescence properties among all known CuI films are demonstrated, in the context of improving the current techniques in the preparation of CuI films for electronic and optoelectronic applications. The comparison of the photoluminescence spectra of CuI films with different growth orientations shows that the highly oriented (110) films prepared are less defective and give only a sharp exciton band.

引用

页码：852 / 854

页数：3

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