Interface-related resistive switching in BiFeO3 thin films

被引：0

作者：

Jin, L. ^{[1
]}

Shuai, Y. ^{[1
]}

Zeng, H. Z. ^{[1
]}

Luo, W. B. ^{[1
]}

Wu, C. G. ^{[1
]}

Zhang, W. L. ^{[1
]}

Pan, X. Q. ^{[1
]}

Zhang, P. ^{[1
]}

Li, Y. R. ^{[1
]}

机构：

[1] Univ Elect Sci & Technol China, State Key Lab Elect Thin Films & Integrated Devic, Chengdu 610054, Peoples R China

来源：

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS | 2015年 / 26卷 / 03期

基金：

中国国家自然科学基金;

关键词：

MEMORY; TRANSITION; CONDUCTION;

D O I：

10.1007/s10854-014-2599-2

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Polycrystalline BiFeO3 thin films have been grown by pulsed laser deposition on Pt/Ti/SiO2/Si substrates. The microstructures of the thin films were characterized by X-ray-diffraction and scanning electronic microscopy. The resistive switching in BiFeO3 thin films has been systematically investigated by current-voltage measurements. It has been observed that the oxygen ambient pressure during the deposition influences the ON/OFF ratio of the switching. The substrate temperature affects the rectifying behaviour of the thin films, and consequently determines the possibility of resistive switching in BiFeO3 thin films. By varying the thickness of the thin film, it has been revealed that the switching takes place near the electrode/film interface. The mechanism of the observed resistive switching has been attributed to a charge trapping effect at the interface.

引用

页码：1727 / 1731

页数：5

共 20 条

[1] Field-driven hysteretic and reversible resistive switch at the Ag-Pr0.7Ca0.3MnO3 interface [J].

Baikalov, A ;

Wang, YQ ;

Shen, B ;

Lorenz, B ;

Tsui, S ;

Sun, YY ;

Xue, YY ;

Chu, CW .

APPLIED PHYSICS LETTERS, 2003, 83 (05) :957-959

[2] Unipolar resistive switching characteristics of ZnO thin films for nonvolatile memory applications [J].

Chang, Wen-Yuan ;

Lai, Yen-Chao ;

Wu, Tai-Bor ;

Wang, Sea-Fue ;

Chen, Frederick ;

Tsai, Ming-Jinn .

APPLIED PHYSICS LETTERS, 2008, 92 (02)

[3] Resistive switching mechanism of TiO2 thin films grown by atomic-layer deposition -: art. no. 033715 [J].

Choi, BJ ;

Jeong, DS ;

Kim, SK ;

Rohde, C ;

Choi, S ;

Oh, JH ;

Kim, HJ ;

Hwang, CS ;

Szot, K ;

Waser, R ;

Reichenberg, B ;

Tiedke, S .

JOURNAL OF APPLIED PHYSICS, 2005, 98 (03)

[4] Switchable Ferroelectric Diode and Photovoltaic Effect in BiFeO3 [J].

Choi, T. ;

Lee, S. ;

Choi, Y. J. ;

Kiryukhin, V. ;

Cheong, S. -W. .

SCIENCE, 2009, 324 (5923) :63-66

[5] Reproducible hysteresis and resistive switching in metal-CuxO-metal heterostructures [J].

Dong, R. ;

Lee, D. S. ;

Xiang, W. F. ;

Oh, S. J. ;

Seong, D. J. ;

Heo, S. H. ;

Choi, H. J. ;

Kwon, M. J. ;

Seo, S. N. ;

Pyun, M. B. ;

Hasan, M. ;

Hwang, Hyunsang .

APPLIED PHYSICS LETTERS, 2007, 90 (04)

[6] Electrical observations of filamentary conductions for the resistive memory switching in NiO films [J].

Kim, D. C. ;

Seo, S. ;

Ahn, S. E. ;

Suh, D. -S. ;

Lee, M. J. ;

Park, B. -H. ;

Yoo, I. K. ;

Baek, I. G. ;

Kim, H. -J. ;

Yim, E. K. ;

Lee, J. E. ;

Park, S. O. ;

Kim, H. S. ;

Chung, U-In ;

Moon, J. T. ;

Ryu, B. I. .

APPLIED PHYSICS LETTERS, 2006, 88 (20)

[7]

Kwon DH, 2010, NAT NANOTECHNOL, V5, P148, DOI [10.1038/nnano.2009.456, 10.1038/NNANO.2009.456]

[8] Anatomy of a Nanoscale Conduction Channel Reveals the Mechanism of a High-Performance Memristor [J].

Miao, Feng ;

Strachan, John Paul ;

Yang, J. Joshua ;

Zhang, Min-Xian ;

Goldfarb, Ilan ;

Torrezan, Antonio C. ;

Eschbach, Peter ;

Kelley, Ronald D. ;

Medeiros-Ribeiro, Gilberto ;

Williams, R. Stanley .

ADVANCED MATERIALS, 2011, 23 (47) :5633-+

[9] Resistive switching in transition metal oxides [J].

Sawa, Akihito .

MATERIALS TODAY, 2008, 11 (06) :28-36

[10] Nonvolatile bipolar resistive switching in Au/BiFeO3/Pt [J].

Shuai, Yao ;

Zhou, Shengqiang ;

Buerger, Danilo ;

Helm, Manfred ;

Schmidt, Heidemarie .

JOURNAL OF APPLIED PHYSICS, 2011, 109 (12)

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